Volume 132; Issue 12

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Journal of Luminescence
Volume 132; Issue 12

Journal of Luminescence

Volume 132; Issue 12

1

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada, Yasufumi Takagi

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 485 KB

english, 2012

2

Effect of the Si excess on the structure and the optical properties of Nd-doped Si-rich silicon oxide

Liang, C.-H., Debieu, O., An, Y.-T., Khomenkova, L., Cardin, J., Gourbilleau, F.

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 264 KB

english, 2012

3

Observation of charge transfer process for optical emission of rare-earth dopant using electric probing technique

Ishii, M., Harako, S., Zhao, X., Komuro, S., Hamilton, B.

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 480 KB

english, 2012

4

Rate equation modelling of erbium luminescence dynamics in erbium-doped silicon-rich-silicon-oxide

Shah, Miraj, Wojdak, Maciej, Kenyon, Anthony J., Halsall, Matthew P., Li, Hang, Crowe, Iain F.

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 1.02 MB

english, 2012

5

Rare-earth doped III-nitride semiconductors for semiconductor spintronics

Asahi, Hajime, Hasegawa, Shigehiko, Zhou, Yi-Kai, Emura, Shuichi

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 594 KB

english, 2012

6

Directing photophysics and structure in semiconductor nanowires with erbium and germanium

Huang, Xuezhen, Wu, Ji, Coffer, Jeffery L.

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 1.46 MB

english, 2012

7

Theoretical analysis of microdisk resonators based on Si/Si1−xGex:Er light-emitting structures

Yurasova, N.V., Stepikhova, M.V., Krasilnikova, L.V., Krasilnik, Z.F.

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 331 KB

english, 2012

8

Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition

Tsuji, Takahiro, Terai, Yoshikazu, Kamarudin, Muhammad Hakim Bin, Yoshida, Kazuki, Fujiwara, Yasufumi

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 402 KB

english, 2012

9

Editorial Board

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 39 KB

english, 2012

10

Luminescent properties of MBE-grown Si:Er/SOI structures

Andreev, B.A., Krasilnik, Z.F., Kryzhkov, D.I., Shengurov, D.V., Yablonskiy, A.N., Kuznetsov, V.P.

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 287 KB

english, 2012

11

The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared

Rebohle, L., Lehmann, J., Prucnal, S., Helm, M., Skorupa, W.

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 239 KB

english, 2012

12

Study of crystallization process of Eu doped SrGa2S4 thin film phosphors by two electron beams evaporation and 355nm Nd:YAG laser-annealing

Kominami, Hiroko, Yamasaki, Takahisa, Nakanishi, Yoichiro, Hara, Kazuhiko

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 667 KB

english, 2012

13

Synthesis and characterization of light emitting Eu2O3 films on Si substrates

Bellocchi, G., Franzò, G., Iacona, F., Boninelli, S., Miritello, M., Priolo, F.

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 568 KB

english, 2012

14

Editorial

Zhou, Shengli, Wang, Zhaohui

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 71 KB

english, 2012