MOS characteristics of ultrathin CVD HfAlO gate dielectrics

IEEE Electron Device Letters 2003 Vol. 24; Iss. 9

MOS characteristics of ultrathin CVD HfAlO gate dielectrics

Bae, S.H., Lee, C.H., Clark, R., Kwong, D.L.
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Volume:
24
Year:
2003
Language:
english
Pages:
559
DOI:
10.1109/led.2003.816578
File:
PDF, 232 KB
english, 2003
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