Volume 24; Issue 9

IEEE Electron Device Letters

Volume 24; Issue 9

1

MOS characteristics of ultrathin CVD HfAlO gate dielectrics

Bae, S.H., Lee, C.H., Clark, R., Kwong, D.L.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 232 KB

english, 2003

2

Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance

Vertiatchikh, A.V., Eastman, L.F.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 250 KB

english, 2003

3

A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes

Joon-Chul Goh,, Jin Jang,, Kyu-Sik Cho,, Choong-Ki Kim,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 244 KB

english, 2003

4

Xuejie Shi,, Henttinen, K., Suni, T., Suni, I., Lau, S.S., Man Wong,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 242 KB

english, 2003

5

A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors

J. Pan, C. Woo, M. Ngo, P. Besser, J. Pellerin, Qi Xiang, Ming-ren Lin

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 255 KB

english, 2003

6

Metal-semiconductor-metal photodetectors with InAlGaP capping and buffer layers

Ching-ting Lee, Hsin-ying Lee

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 239 KB

english, 2003

7

40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology

Y. Zhang, C. Whelan, R. Leoni, P. Marsh, W. Hoke, J. Hunt, C. Laighton, T. Kazior

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 290 KB

english, 2003

8

Gate field emission induced breakdown in power SiC MESFETs

Ho-young Cha, C. Thomas, Y. Choi, L. Eastman, M. Spencer

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 352 KB

english, 2003

9

0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy

Hudait, M.K., Lin, Y., Palmisiano, M.N., Ringel, S.A.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 535 KB

english, 2003

10

High-isolation bonding pad design for silicon RFIC up to 20 GHz

Sang Lam,, Mok, P.K.T., Ko, P.K., Mansun Chan,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 743 KB

english, 2003

11

Polycrystalline silicon thin-film transistors fabricated by rapid Joule heating method

Kaneko, Y., Andoh, N., Sameshima, T.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 229 KB

english, 2003

12

Degradation dynamics of ultrathin gate oxides subjected to electrical stress

Miranda, E., Cester, A.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 240 KB

english, 2003

13

Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse

Jinbong Kim,, Kwyro Lee,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 671 KB

english, 2003

14

Band offset induced threshold variation in strained-Si nMOSFETs

Jung-Suk Goo,, Qi Xiang,, Takamura, Y., Arasnia, F., Paton, E.N., Besser, P., Pan, J., Ming-Ren Lin,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 208 KB

english, 2003

15

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

Adivarahan, V., Gaevski, M., Sun, W.H., Fatima, H., Koudymov, A., Saygi, S., Simin, G., Yang, J., Khan, M.A., Tarakji, A., Shur, M.S., Gaska, R.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 250 KB

english, 2003

16

Low-leakage diode string designs using triple-well technologies for RF-ESD applications

Shiao-Shien Chen,, Tung-Yang Chen,, Tien-Hao Tang,, Jen-Kon Chen,, Chiu-Hsiang Chou,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 251 KB

english, 2003

17

On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

Westlinder, J., Schram, T., Pantisano, L., Cartier, E., Kerber, A., Lujan, G.S., Olsson, J., Groeseneken, G.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 250 KB

english, 2003

18

A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

In-Hyuk Song,, Su-Hyuk Kang,, Woo-Jin Nam,, Min-Koo Han,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 587 KB

english, 2003

19

Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

Wong, W.S., Ready, S.E., Jeng-Ping Lu,, Street, R.A.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 1001 KB

english, 2003

20

Dielectric resolution enhancement coating technology (DiRECT) - a sub-90 nm space and hole patterning technology using 248-nm lithography and plasma-enhanced polymerization

Ming-Chung Liang,, Hsin-Yi Tsai,, Chia-Chi Chung,, Cheng-Chen Hsueh,, Chung, H., Chih-Yuan Lu,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 353 KB

english, 2003

21

Improved independent gate N-type FinFET fabrication and characterization

Fried, D.M., Duster, J.S., Kornegay, K.T.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 302 KB

english, 2003

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