![](/img/cover-not-exists.png)
Enhanced MOS 1/f noise due to near-interfacial oxygen deficiency
D.M. Fleetwood, W.L. Warren, M.R. Shaneyfelt, R.A.B. Devine, John H. ScofieldVolume:
187
Year:
1995
Language:
english
Pages:
206
DOI:
10.1016/0022-3093(95)00138-7
File:
PDF, 483 KB
english, 1995