Characterization of low-temperature molecular-beam-epitaxy...

Semiconductor Science and Technology 2007 / 07 Vol. 22; Iss. 7

Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers

Pačebutas, V, Bertulis, K, Dapkus, L, Aleksejenko, G, Krotkus, A, Yu, K M, Walukiewicz, W
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Volume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/7/026
Date:
July, 2007
File:
PDF, 318 KB
english, 2007
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