Volume 22; Issue 7

Semiconductor Science and Technology

Volume 22; Issue 7

1

Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers

Pačebutas, V, Bertulis, K, Dapkus, L, Aleksejenko, G, Krotkus, A, Yu, K M, Walukiewicz, W

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 318 KB

english, 2007

2

Simulation of the reverse I – V characteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs

Boháček, P, Dubecký, F, Sekáčová, M

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 656 KB

english, 2007

3

Fabrication and characteristics of thin-film InGaN–GaN light-emitting diodes with TiO 2 /SiO 2 omnidirectional reflectors

Chiu, C H, Kuo, H C, Lee, C E, Lin, C H, Cheng, P C, Huang, H W, Lu, T C, Wang, S C, Leung, K M

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 715 KB

english, 2007

4

An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Γ point

Han, Genquan, Yu, Jinzhong

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 221 KB

english, 2007

5

DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiN x

Shiu, J Y, Desmaris, V, Rorsman, N, Kumakura, K, Makimoto, T, Zirath, H, Chang, E Y

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 121 KB

english, 2007

6

High-efficiency transparent organic light-emitting diode with one thin layer of nickel oxide on a transparent anode for see-through-display application

Wei, Bin, Yamamoto, Sayaka, Ichikawa, Musubu, Li, Chong, Fukuda, Takeshi, Taniguchi, Yoshio

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 115 KB

english, 2007

7

Structural and optoelectronic characterization of TiO 2 films prepared using the sol–gel technique

González, A E Jiménez, Santiago, S Gelover

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 693 KB

english, 2007

8

Interband light absorption and Pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells

Vorobjev, L E, Fedosov, N K, Panevin, V Yu, Firsov, D A, Shalygin, V A, Grozina, M I, Andreev, A, Ustinov, V M, Tarasov, I S, Pikhtin, N A, Samsonenko, Yu B, Tonkikh, A A, Cirlin, G E, Egorov, V A, Ju

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 299 KB

english, 2007

9

Numerical analysis on the 4H-SiC MESFETs with a source field plate

Deng, Xiaochuan, Zhang, Bo, Li, Zhaoji, Chen, Zhuangliang

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 534 KB

english, 2007

10

Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

Moontragoon, Pairot, Ikonić, Zoran, Harrison, Paul

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 538 KB

english, 2007

11

Highly efficient and high colour rendering index white organic light-emitting devices using bis(2-(2-fluorphenyl)- 1,3-benzothiozolato-N,C 2′ ) iridium (acetylacetonate) as yellow emitter

Li, Jiang, Chen, Ping, Duan, Yu, Zhao, Feifei, Li, Chuannan, Xie, Wenfa, Liu, Shiyong, Zhang, Liying, Li, Bin

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 137 KB

english, 2007

12

Thermal design of ceramic packages for high power light-emitting diodes

Yang, Lianqiao, Hu, Jianzheng, Jang, Sunho, Shin, Moo Whan

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 361 KB

english, 2007

13

High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate

Kim, Chang Su, Jo, Sung Jin, Kim, Jong Bok, Ryu, Seung Yoon, Noh, Joo Hyon, Baik, Hong Koo, Lee, Se Jong, Song, Kie Moon

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 671 KB

english, 2007

14

White organic light-emitting devices employing phosphorescent iridium complex as RGB dopants

Song, Ruili, Duan, Yu, Chen, Shufen, Zhao, Yi, Hou, Jingying, Liu, Shiyong

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 221 KB

english, 2007

15

High radiant flux photovoltaic cells for solar proximity missions

Rahman, Faiz, Farmer, Corrie D, Johnson, Nigel P, Schmidt, Christoph, Pfaff, Gerhard, Stanley, Colin R

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 135 KB

english, 2007

16

A metamorphic heterostructure field-effect transistor with a double delta-doped channel

Huang, Dong-Hai, Hsu, Wei-Chou, Lin, Yu-Shyan, Yeh, Jung-Han, Huang, Jun-Chin

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 310 KB

english, 2007

17

A pad roughness model for the analysis of lubrication in the chemical mechanical polishing of a silicon wafer

Guo, Dongming, Liu, Jingyuan, Kang, Renke, Jin, Zhuji

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 139 KB

english, 2007

18

Efficient top-emitting organic light-emitting diodes with a V 2 O 5 modified silver anode

Wu, Jiang, Hou, Jianhua, Cheng, Yanxiang, Xie, Zhiyuan, Wang, Lixiang

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 123 KB

english, 2007

19

Suppression of spin-splitting in Al 0.33 Ga 0.67 As/Al y Ga 1− y As heterostructures with y varying from 0.10 to 0.15

Russell, V H, Holmes, S N, Atkinson, P, Maude, D K, Sfigakis, F, Ritchie, D A, Pepper, M

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 672 KB

english, 2007

20

Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates

Swietlik, T, Franssen, G, Skierbiszewski, C, Czernecki, R, Wiśniewski, P, Kryśko, M, Leszczyński, M, Grzegory, I, Mensz, P, Juršenas, S, Suski, T, Perlin, P

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 281 KB

english, 2007

21

Charge trapping properties of ultra-thin TiO 2 films on strained-Si

Bera, M K, Maiti, C K

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 906 KB

english, 2007

22

40 Gbps electroabsorption modulated DFB laser with tilted facet formed by dry etching

Choe, Joong-Seon, Kwon, Yong-Hwan, Sim, Jae-Sik, Kim, Sung-Bock

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 225 KB

english, 2007

23

Study on combined channel parameters of a static induction transistor

Ying, Tang, Su, Liu, Siyuan, Li, Peng, Chang

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 219 KB

english, 2007

24

First demonstration of a 1.52 µm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer

Homeyer, E, Piron, R, Grillot, F, Dehaese, O, Tavernier, K, Macé, E, Corre, A Le, Loualiche, S

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 444 KB

english, 2007

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