Impact of Passivation Thickness in Highly Scaled GaN HEMTs

IEEE Electron Device Letters 2012 Vol. 33; Iss. 7

Impact of Passivation Thickness in Highly Scaled GaN HEMTs

Dong Seup Lee, Laboutin, O., Yu Cao, Johnson, W., Beam, E., Ketterson, A., Schuette, M., Saunier, P., Palacios, T.
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Volume:
33
Year:
2012
Language:
english
DOI:
10.1109/led.2012.2194691
File:
PDF, 373 KB
english, 2012
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