Volume 33; Issue 7

IEEE Electron Device Letters

Volume 33; Issue 7

1

IEEE Electron Device Letters publication information

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 50 KB

english, 2012

2

Formation and Characterization of Filamentary Current Paths in -Based Resistive Switching Structures

Palumbo, F., Miranda, E., Ghibaudo, G., Jousseaume, V.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 416 KB

english, 2012

3

InAlN/GaN HEMTs for Operation in the 1000 Regime: A First Experiment

Maier, D., Alomari, M., Grandjean, N., Carlin, J., Diforte-Poisson, M., Dua, C., Delage, S., Kohn, E.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 338 KB

english, 2012

4

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and of 370 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo, Sensale-Rodriguez, B., Guowang Li, Ronghua Wang, Faria, F., Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Kosel, T., Snider, G., Fay, P., Jena, D., Huili Xing

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 463 KB

english, 2012

5

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With of 275 GHz

Nidhi, Dasgupta, S., Lu, J., Speck, J.S., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 300 KB

english, 2012

6

Low-Frequency Noise in Enhancement-Mode GaN MOS-HEMTs by Using Stacked Gate Dielectric

Hsien-Chin Chiu, Jia-Hsuan Wu, Chih-Wei Yang, Fan-Hsiu Huang, Hsuan-Ling Kao

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 411 KB

english, 2012

7

AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current

Yi-Wei Lian, Yu-Syuan Lin, Hou-Cheng Lu, Yen-Chieh Huang, Hsu, S.S.H.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 367 KB

english, 2012

8

Nucleation and Resistivity of Ultrathin TiN Films Grown by High-Power Impulse Magnetron Sputtering

Magnus, F., Ingason, A.S., Olafsson, S., Gudmundsson, J.T.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 350 KB

english, 2012

9

Impact of Passivation Thickness in Highly Scaled GaN HEMTs

Dong Seup Lee, Laboutin, O., Yu Cao, Johnson, W., Beam, E., Ketterson, A., Schuette, M., Saunier, P., Palacios, T.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 373 KB

english, 2012

10

Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs

Euiyoun Hong, Daeyoun Yun, Hagyoul Bae, Hyunjun Choi, Won Hee Lee, Mihee Uhm, Hyojoon Seo, Jieun Lee, Jaeman Jang, Dae Hwan Kim, Dong Myong Kim

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 345 KB

english, 2012

11

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering

Nicoletti, T., Aoulaiche, M., Almeida, L.M., Santos, S.D., Martino, J.A., Veloso, A., Jurczak, M., Simoen, E., Claeys, C.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 387 KB

english, 2012

12

A Novel Depletion-Mode a-IGZO TFT Shift Register With a Node-Shared Structure

Binn Kim, Hyung Nyuck Cho, Woo Seok Choi, Seung-Hee Kuk, Juhn-Suk Yoo, Soo Young Yoon, Myungchul Jun, Yong-Kee Hwang, Min-Koo Han

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 418 KB

english, 2012

13

Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs

Han-Chieh Ho, Zon-Yan Gao, Heng-Kuang Lin, Pei-Chin Chiu, Yue-Ming Hsin, Jen-Inn Chyi

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 338 KB

english, 2012

14

Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

Sungsik Lee, Ahnood, A., Sambandan, S., Madan, A., Nathan, A.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 334 KB

english, 2012

15

Effect of Annealing Temperature on -Based Thin-Film-Transistor Performance

Ni Zhong, Jun Jun Cao, Shima, H., Akinaga, H.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 377 KB

english, 2012

16

Effect of Temperature and Humidity on and Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

Chang-Hee Kim, Sung-Won Yoo, Dong-Woo Nam, Sunae Seo, Jong-Ho Lee

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 373 KB

english, 2012

17

Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs

Jin Ju Kim, Moonju Cho, Pantisano, L., Ukjin Jung, Young Gon Lee, Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Byoung Hun Lee

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 386 KB

english, 2012

18

Effects of Metal Capping on Thermal Annealing of Copper Interconnects

Yang, C.-C., Li, B., Edelstein, D., Rosenberg, R.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 161 KB

english, 2012

19

RTD–MOSFET Millimeter-Wave Wavelet Generator

Egard, M., Arlelid, M., Ohlsson, L., Borg, B.M., Lind, E., Wernersson, L.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 460 KB

english, 2012

20

High-Speed and Low-Voltage-Driven Shift Register With Self-Aligned Coplanar a-IGZO TFTs

Di Geng, Dong Han Kang, Man Ju Seok, Mativenga, M., Jin Jang

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 402 KB

english, 2012

21

Size-Dependent-Transport Study of Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

Gu, J.J., Heng Wu, Yiqun Liu, Neal, A.T., Gordon, R.G., Ye, P.D.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 420 KB

english, 2012

22

Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications

Sheng-Yao Hsu, Hsiao-Yu Chen, Kuan-Neng Chen

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 387 KB

english, 2012

23

Correlation Between Random Telegraph Noise and Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain

Bo Chin Wang, San Lein Wu, Chien Wei Huang, Yu Ying Lu, Shoou Jinn Chang, Yu Min Lin, Kun Hsien Lee, Cheng, O.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 341 KB

english, 2012

24

AlGaN/GaN MISHEMTs With High-$kappa hbox{LaLuO}_{3}$ Gate Dielectric

Shu Yang, Sen Huang, Hongwei Chen, Chunhua Zhou, Qi Zhou, Schnee, M., Qing-Tai Zhao, Schubert, J., Chen, K.J.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 403 KB

english, 2012

25

Chemical Oxide Interfacial Layer for the High--Last/Gate-Last Integration Scheme

Ying-Tsung Chen, Ssu-I Fu, Wen-Tai Chiang, Chien-Ting Lin, Shih-Hung Tsai, Shao-Wei Wang, Shoou-Jinn Chang

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 317 KB

english, 2012

26

Conduction Mechanism of Se Schottky Contact to n-Type Ge

Janardhanam, V., Yang-Kyu Park, Hyung-Joong Yun, Kwang-Soon Ahn, Chel-Jong Choi

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 287 KB

english, 2012

27

A Simple Pixel Structure Using Polycrystalline-Silicon Thin-Film Transistors for High-Resolution Active-Matrix Organic Light-Emitting Diode Displays

Hai-Jung In, Oh-Kyong Kwon

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 224 KB

english, 2012

28

Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer

Yun-Yan Zhang, Xue-Liang Zhu, Yi-An Yin, Jun Ma

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 431 KB

english, 2012

29

Table of Contents

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 64 KB

english, 2012

30

Table of Contents

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 60 KB

english, 2012

31

IEEE Electron Devices Society Meetings Calendar for 2012 (As of 24 May 2012)

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 55 KB

english, 2012

32

Special issue on advanced modeling of power devices and their applications

Journal:

IEEE Electron Device Letters

Year:

2012

File:

PDF, 165 KB

2012

33

Ultralow Specific On-Resistance Superjunction Vertical DMOS With High-$K$ Dielectric Pillar

Luo, Xiaorong, Jiang, Y. H., Zhou, K., Wang, P., Wang, X. W., Wang, Q., Yao, G. L., Zhang, B., Li, Z. J.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 649 KB

english, 2012

34

Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness

Hashemi, O., Chern, W., Lee, H., Teherani, J. T., Zhu, Y., Gonsalvez, J., Shahidi, G. G., Hoyt, J. L.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 357 KB

english, 2012

35

A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Liu, Han-Yin, Chou, Bo-Yi, Hsu, Wei-Chou, Lee, Ching-Sung, Ho, Chiu-Sheng

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 407 KB

english, 2012

36

PDMS-Coated Piezoresistive NEMS Diaphragm for Chloroform Vapor Detection

Guo, Huihui, Lou, Liang, Chen, Xiangdong, Lee, Chengkuo

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 299 KB

english, 2012

37

UV-Assisted Alcohol Sensing With Zinc Oxide-Functionalized Gallium Nitride Nanowires

Bajpai, Ritu, Motayed, Abhishek, Davydov, Albert V., Bertness, Kris A., Zaghloul, Mona E.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 352 KB

english, 2012

38

Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

Veliadis, Victor, Hearne, H., Stewart, E. J., Snook, M., Chang, W., Caldwell, J. D., Ha, H. C., El-Hinnawy, N., Borodulin, P., Howell, R. S., Urciuoli, D., Lelis, A., Scozzie, C.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 324 KB

english, 2012

39

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

Lee, Hyung-Seok, Piedra, Daniel, Sun, Min, Gao, Xiang, Guo, Shiping, Palacios, TomÃ¡s

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 535 KB

english, 2012

40

Microelectromechanical Systems (MEMS) Based-Ultrasonic Electrostatic Actuators on a Flexible Substrate

Kim, Sangpyeong, Zhang, Xu, Daugherty, Robin, Lee, Ed, Kunnen, George, Allee, David R., Forsythe, Eric, Chae, Junseok

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 373 KB

english, 2012

41

Graphene-Based Interconnects on Hexagonal Boron Nitride Substrate

Jain, Nikhil, Bansal, Tanesh, Durcan, Christopher, Yu, Bin

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 199 KB

english, 2012

42

Efficient Semitransparent Inverted Polymer Solar Cells With the Anode of Tunable Incident Light Transmittance

Xu, Yang, Shen, Liang, Yu, Wenjuan, Zhang, Haifeng, Chen, Weiyou, Ruan, Shengping

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 375 KB

english, 2012

43

Modeling the Electrothermal Stability of Power MOSFETs During Switching Transients

Alatise, Olayiwola, Parker-Allotey, Nii-Adotei, Mawby, Phil

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 366 KB

english, 2012

44

$ hbox{Mg}_{0.46}hbox{Zn}_{0.54}hbox{O}$ Thin Film]]>

Zheng, Qinghong, Huang, Feng, Huang, Jin, Hu, Qichan, Chen, Dagui, Ding, Kai

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 279 KB

english, 2012

45

Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures

Park, Pil Sung, Nath, Digbijoy N., Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 367 KB

english, 2012

46

Device Circuit Co-Design Issues in Vertical Nanowire CMOS Platform

S. Maheshwaram, S. K. Manhas, G. Kaushal, B. Anand, N. Singh

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 426 KB

english, 2012

47

Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$

Kim, Hyo Kyeom, Lee, Sang Young, Yu, Il-Hyuk, Park, Tae Joo, Choi, Rino, Hwang, Cheol Seong

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 369 KB

english, 2012

48

$\hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior

Sriraman, Venkatakrishnan, Li, Xiang, Singh, Navab, Lee, Sungjoo

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 425 KB

english, 2012

49

UV–Visible Light-Trapping Structure of Loosely Packed Submicrometer Silica Sphere for Amorphous Silicon Solar Cells

Huang, Wen-Hsien, Shieh, Jia-Min, Pan, Fu-Ming, Shen, Chang-Hong, Lien, Yu-Chung, Tsai, Min-An, Kuo, Hao-Chung, Dai, Bau-Tong, Yang, Fu-Liang

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 460 KB

english, 2012

50

Capacitance–Voltage Measurement With Photon Probe to Quantify the Trap Density of States in Amorphous Thin-Film Transistors

Chang, Youn-Gyoung, Lee, Hee Sung, Choi, Kyunghee, Im, Seongil

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 449 KB

english, 2012

51

Soft Actuator Using Ionic Polymer–Metal Composite Composed of Gold Electrodes Deposited Using Vacuum Evaporation

Okazaki, Hiroshi, Sawada, Shigeki, Kimura, Mutsumi, Tanaka, Hideki, Matsumoto, Tetsurou, Ohtake, Toshihiro, Inoue, Satoshi

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 427 KB

english, 2012

52

Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

Mondal, Somnath, Her, Jim-Long, Chen, Fa-Hsyang, Shih, Shao-Ju, Pan, Tung-Ming

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 477 KB

english, 2012

53

Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

Hsieh, Tien-Yu, Chang, Ting-Chang, Chen, Te-Chih, Tsai, Ming-Yen, Chen, Yu-Te, Jian, Fu-Yen, Chung, Yi-Chen, Ting, Hung-Che, Chen, Chia-Yu

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 359 KB

english, 2012

54

Polarity Dependence of the Conduction Mechanism in Interlevel Low-$k$ Dielectrics

Lin, Mingte, Liang, James, Wang, C. J., Juan, Alex, Su, K. C.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 362 KB

english, 2012

55

A New 4T0.5C AMOLED Pixel Circuit With Reverse Bias to Alleviate OLED Degradation

Lee, Kuei-Yu, Hsu, Yen-Ping, Chao, Paul C.-P.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 359 KB

english, 2012

56

Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline- $\hbox{TiO}_{x}$-Based Resistive-Switching Memory Devices

Lee, Jung-Kyu, Cho, In-Tak, Kwon, Hyuck-In, Hwang, Cheol Seong, Park, Chan Hyeong, Lee, Jong-Ho

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 429 KB

english, 2012

57

Variable Inductors in CMOS for Millimeter-Wave Applications

Yun, Yang-Hun, Kao, Te-Yu J., O, Kenneth K.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 278 KB

english, 2012

58

Miniature CMOS Stacked Spiral-Coupled Directional Coupler With $-$67-dB Isolation and $-$ 0.8-dB Insertion Loss

Ye, Le, Zheng, Yongan, Wang, Jiayi, Liao, Huailin, Huang, Ru

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 485 KB

english, 2012

59

Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction

Wang, T., Wu, Hao, Wang, Z., Chen, C., Liu, Chang

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 296 KB

english, 2012

60

Low-Power-Driven and Low-Optical-Loss 40-Gb/s Electroabsorption Modulator Using Self-Aligned Two-Step Undercut-Etched Waveguide

Wu, Tsu-Hsiu, Wu, Jui-Pin, Chiu, Yi-Jen

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 258 KB

english, 2012

61

Development of a Heat Sink With Periodic Asymmetric Structures Using Grayscale Lithography and Deep Reactive Ion Etching

Thiagarajan, Naveenan, Kapsenberg, Florian, Narayanan, Vinod, Bhavnani, Sushil H., Ellis, Charles D.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 254 KB

english, 2012

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