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High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate
Husna, Fatima, Lachab, Mohamed, Sultana, Mahbuba, Adivarahan, Vinod, Fareed, Qhalid, Khan, AsifVolume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2204888
Date:
September, 2012
File:
PDF, 691 KB
english, 2012