Volume 59; Issue 9

IEEE Transactions on Electron Devices

Volume 59; Issue 9

1

Design of a Triodelike Electron Gun for Millimeter-Wave Gyrodevices

Robertson, C. W., Young, A. R., Ronald, K., Cross, A. W., Whyte, C. G.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 387 KB

english, 2012

2

Metal-to-Multilayer-Graphene Contact—Part II: Analysis of Contact Resistance

Khatami, Yasin, Li, Hong, Xu, Chuan, Banerjee, Kaustav

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 836 KB

english, 2012

3

String Current in Decananometer nand Flash Arrays: A Compact-Modeling Investigation

Paolucci, Giovanni M., Miccoli, Carmine, Monzio Compagnoni, Christian, Spinelli, Alessandro S., Lacaita, Andrea L.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 367 KB

english, 2012

4

Performance Evaluation of III–V Nanowire Transistors

Jansson, Kristofer, Lind, Erik, Wernersson, Lars-Erik

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 896 KB

english, 2012

5

Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

Khatami, Yasin, Li, Hong, Xu, Chuan, Banerjee, Kaustav

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 756 KB

english, 2012

6

A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs

Bellone, Salvatore, Di Benedetto, Luigi, Licciardo, Gian Domenico

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 613 KB

english, 2012

7

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

Husna, Fatima, Lachab, Mohamed, Sultana, Mahbuba, Adivarahan, Vinod, Fareed, Qhalid, Khan, Asif

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 691 KB

english, 2012

8

Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

Jung, Hyung-Suk, Yu, Il-Hyuk, Kim, Hyo Kyeom, Lee, Sang Young, Lee, Joohwi, Choi, Yujin, Chung, Yoon Jang, Lee, Nae-In, Park, Tae Joo, Choi, Jung-Hae, Hwang, Cheol Seong

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 729 KB

english, 2012

9

On the RF Power-Handling Capabilities of Forward- and Inverse-Mode SiGe HBT RF Switches Fabricated on Thick-Film SOI

Seth, Sachin, Song, Peter, Cressler, John D., Babcock, Jeff A., Cestra, Greg

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 376 KB

english, 2012

10

A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs

Ortiz-Conde, Adelmo, Garcia-Sanchez, Francisco J.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 938 KB

english, 2012

11

A Correlation-Considered Variation-Aware Interconnect Parasitic Profile Extraction Method

Zheng, Ren, Xi, Li, Shaojian, Hu, Shoumian, Chen, Yuhang, Zhao, Yanling, Shi

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.45 MB

english, 2012

12

A Vertical Power MOSFET With an Interdigitated Drift Region Using High- $k$ Insulator

Chen, Xingbi, Huang, Mingmin

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 710 KB

english, 2012

13

The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETs

Xia, Tongsheng, Wang, Yu, Zhang, Liujun, Li, Hongge

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 584 KB

english, 2012

14

Scaling of High-Aspect-Ratio Current Limiters for the Individual Ballasting of Large Arrays of Field Emitters

Guerrera, Stephen A., Velasquez-Garcia, Luis Fernando, Akinwande, Akintunde Ibitayo

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.05 MB

english, 2012

15

A Physical Model for Grain-Boundary-Induced Threshold Voltage Variation in Polysilicon Thin-Film Transistors

Ho, Chih-Hsiang, Panagopoulos, Georgios, Roy, Kaushik

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.03 MB

english, 2012

16

Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates

Yu, Ran, Das, Samaresh, Ferain, Isabelle, Razavi, Pedram, Shayesteh, Maryam, Kranti, Abhinav, Duffy, Ray, Colinge, Jean-Pierre

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 858 KB

english, 2012

17

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

Larentis, Stefano, Nardi, Federico, Balatti, Simone, Gilmer, David C., Ielmini, Daniele

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.37 MB

english, 2012

18

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

Nardi, Federico, Larentis, Stefano, Balatti, Simone, Gilmer, David C., Ielmini, Daniele

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.07 MB

english, 2012

19

High-Frequency Modeling of Poly-Si Thin-Film Transistors for Low-Cost RF Applications

Kim, Soo Youn, Loke, Wing-Fai, Jung, Byunghoo, Roy, Kaushik

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 776 KB

english, 2012

20

Studies on Halo Implants in Controlling Short-Channel Effects of Nanoscale Ge Channel pMOSFETs

Mondal, Chandrima, Biswas, Abhijit

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1001 KB

english, 2012

21

Investigation of Hole-Blocking Contacts for High-Conversion-Gain Amorphous Selenium Detectors for X-Ray Imaging

Abbaszadeh, Shiva, Allec, Nicholas, Ghanbarzadeh, Sina, Shafique, Umar, Karim, Karim S.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.48 MB

english, 2012

22

Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures

Zhu, Wei, Chen, T. P., Yang, Ming, Liu, Yang, Fung, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 694 KB

english, 2012

23

Dark Current in Silicon Photomultiplier Pixels: Data and Model

Pagano, Roberto, Corso, Domenico, Lombardo, Salvatore, Valvo, Giuseppina, Sanfilippo, Delfo Nunzio, Fallica, Giogio, Libertino, Sebania

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.18 MB

english, 2012

24

A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs

Chiang, Te-Kuang

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 631 KB

english, 2012

25

Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET

Lacord, Joris, Huguenin, Jean-Luc, Skotnicki, Thomas, Ghibaudo, Gérard, Boeuf, Frédéric

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 479 KB

english, 2012

26

Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part I: Physical Investigation

Castellani, Niccolò, Monzio Compagnoni, Christian, Mauri, Aurelio, Spinelli, Alessandro S., Lacaita, Andrea L.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 444 KB

english, 2012

27

Effect of Tunnel Recombination Junction on Crossover Between the Dark and Illuminated Current–Voltage Curves of Tandem Solar Cells

Bills, Braden, Liao, Xianbo, Galipeau, David W., Fan, Qi Hua

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 327 KB

english, 2012

28

Transient Thermal Resistance Test of Single-Crystal-Silicon Solar Cell

Zhang, Jihong, Gao, Yulin, Lu, Yijun, Zhu, Lihong, Guo, Ziquan, Chen, Guolong, Chen, Zhong

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 800 KB

english, 2012

29

Study on Characteristics of Poly-Si TFTs With 3-D Finlike Channels Fabricated by Nanoimprint Technology

Chen, Henry J. H., Jhang, Jia-Rong, Huang, Chien-Jen

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 514 KB

english, 2012

30

Edge Effects in Bottom-Gate Inverted Staggered Thin-Film Transistors

Mativenga, Mallory, Um, Jae Kwang, Kang, Dong Han, Mruthyunjaya, Ravi K., Chang, Jeff H., Heiler, Gregory N., Tredwell, Timothy J., Jang, Jin

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.58 MB

english, 2012

31

A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Epilayer on Si Substrates

Tang, Mengrao, Li, Cheng, Wu, Zheng, Liu, Guanzhou, Huang, Wei, Lai, Hongkai, Chen, Songyan

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 602 KB

english, 2012

32

Effect of Asymmetric Channel on Charging Behavior of 22-nm Quantum-Dot Floating-Gate Flash Memory Cell

Shrirao, Ashwini, Gautam, Rashmi, Patrikar, Rajendra M.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 259 KB

english, 2012

33

Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part II: Spectroscopic Implications

Monzio Compagnoni, Christian, Castellani, Niccolò, Mauri, Aurelio, Spinelli, Alessandro S., Lacaita, Andrea L.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 889 KB

english, 2012

34

Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme

Augustine, Noel, Kumar, Khamesh, Bhattacharyya, Arkaprava, Zimmer, Thomas, Chakravorty, Anjan

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 410 KB

english, 2012

35

Optoelectronic Performance of Radial-Junction Si Nanopillar and Nanohole Solar Cells

Li, Hua-Min, Lee, Dae-Yeong, Yoo, Won Jong

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1012 KB

english, 2012

36

Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target

Li, Shaojuan, Cai, Yong, Han, Dedong, Wang, Yi, Sun, Lei, Chan, Mansun, Zhang, Shengdong

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 372 KB

english, 2012

37

Improved Off-State Reliability of Nonvolatile Resistive Switch With Low Programming Voltage

Tada, Munehiro, Sakamoto, Toshitsugu, Miyamura, Makoto, Banno, Naoki, Okamoto, Koichiro, Iguchi, Noriyuki, Hada, Hiromitsu

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 864 KB

english, 2012

38

Theoretical Estimation of Electromigration in Metallic Carbon Nanotubes Considering Self-Heating Effect

Verma, Rekha, Bhattacharya, Sitangshu, Mahapatra, Santanu

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 484 KB

english, 2012

39

Addressable Nanowire Field-Effect-Transistor Biosensors With Local Backgates

Baek, David J., Choi, Sung-Jin, Ahn, Jae-Hyuk, Kim, Jee-Yeon, Choi, Yang-Kyu

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 484 KB

english, 2012

40

A CMOS Biocompatible Charge Detector for Biosensing Applications

Lai, Stefano, Caboni, Alessandra, Loi, Daniela, Barbaro, Massimo

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 672 KB

english, 2012

41

A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETs

Sung, Woongje, Van Brunt, Edward, Baliga, B. Jayant, Huang, Alex Q.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 408 KB

english, 2012

42

Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal–Oxide Polymer Structure

Rocha, Paulo R. F., Gomes, Henrique Leonel, Vandamme, Lode K. J., Chen, Qian, Kiazadeh, Asal, de Leeuw, Dago M., Meskers, Stefan C. J.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 262 KB

english, 2012

43

Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells

Kim, Hee-Dong, An, Ho-Myoung, Kim, Tae Geun

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 702 KB

english, 2012

44

A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode Driver

He, Jin, Chan, Wan Tim, Wang, Cheng, Lou, Haijun, Wang, Ruonan, Li, Lin, Liang, Hailang, Wu, Wen, Ye, Yun, Ma, Yutao, Chen, Qin, He, Xiaomeng, Chan, Mansun

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 363 KB

english, 2012

45

Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion

Chen, Han-Ping, Yuan, Yu, Yu, Bo, Ahn, Jaesoo, McIntyre, Paul C., Asbeck, Peter M., Rodwell, Mark J. W., Taur, Yuan

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 917 KB

english, 2012

46

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 64 KB

english, 2012

47

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 31 KB

english, 2012

48

Themed issue on micro/nano-electro-mechanical-systems (MEMS/NEMS)

Journal:

IEEE Transactions on Electron Devices

Year:

2012

File:

PDF, 886 KB

2012

49

[Blank page - back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2012

File:

PDF, 5 KB

2012

50

New Subject Heading on “Memory Devices and Technology”

Cressler, John D., Chatterjee, Amitava

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 19 KB

english, 2012

51

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 52 KB

english, 2012

52

Quality without compromise [advertisement]

Journal:

IEEE Transactions on Electron Devices

Year:

2012

File:

PDF, 324 KB

2012

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