Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias...

IEEE Electron Device Letters 2009 Vol. 30; Iss. 5

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

Zanoni, E., Danesin, F., Meneghini, M., Cetronio, A., Lanzieri, C., Peroni, M., Meneghesso, G.
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Volume:
30
Year:
2009
Language:
english
DOI:
10.1109/led.2009.2016440
File:
PDF, 303 KB
english, 2009
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