Volume 30; Issue 5

IEEE Electron Device Letters

Volume 30; Issue 5

1

Sub-1-K Operation of SiGe Transistors and Circuits

Najafizadeh, L., Adams, J.S., Phillips, S.D., Moen, K.A., Cressler, J.D., Aslam, S., Stevenson, T.R., Meloy, R.M.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 251 KB

english, 2009

2

Vertically Stacked Silicon Nanowire Transistors Fabricated by Inductive Plasma Etching and Stress-Limited Oxidation

Ng, R.M.Y., Tao Wang, Feng Liu, Xuan Zuo, Jin He, Mansun Chan

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 392 KB

english, 2009

3

Stackable All-Oxide-Based Nonvolatile Memory With Antifuse and Diode

Seung-Eon Ahn, Bo Soo Kang, Ki Hwan Kim, Myoung-Jae Lee, Chang Bum Lee, Stefanovich, G., Chang Jung Kim, Youngsoo Park

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 338 KB

english, 2009

4

A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling

Suyoun Lee, Jeung-hyun Jeong, Taek Sung Lee, Won Mok Kim, Byung-ki Cheong

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 428 KB

english, 2009

5

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

Zanoni, E., Danesin, F., Meneghini, M., Cetronio, A., Lanzieri, C., Peroni, M., Meneghesso, G.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 303 KB

english, 2009

6

A Low-Parasitic and Common-Centroid Cross-Coupled CMOS Transistor Structure for High-Frequency VCO Design

In-Young Lee,, Seok-Ju Yun,, Seung-Min Oh,, Sang-Gug Lee,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 375 KB

english, 2009

7

Graphene Frequency Multipliers

Han Wang,, Nezich, D., Jing Kong,, Palacios, T.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 139 KB

english, 2009

8

Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- $k$ CMOSFETs

Kadoshima, M., Matsuki, T., Miyazaki, S., Shiraishi, K., Chikyo, T., Yamada, K., Aoyama, T., Nara, Y., Ohji, Y.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 166 KB

english, 2009

9

RF Transmission Line Method for Wide-Bandgap Heterostructures

Koudymov, A., Pala, N., Tokranov, V., Oktyabrsky, S., Gaevski, M., Jain, R., Yang, J., Hu, X., Shur, M., Gaska, R., Simin, G.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 142 KB

english, 2009

10

Very High Field-Emission Current From a Carbon-Nanotube Cathode With a Pulse Driving Mode

Lei Wei,, Zhang Xiaobing,, Lou Chaogang,, Zhao Zhiwei,, Wang Baoping,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 267 KB

english, 2009

11

Magnetic-Field Sensitivity Enhancement by Magnetoelectric Sensor Arrays

Zengping Xing,, Junyi Zhai,, Junqi Gao,, Jiefang Li,, Viehland, D.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 200 KB

english, 2009

12

A Silicon MEMS DC/DC Converter for Autonomous Vibration-to-Electrical-Energy Scavenger

Paracha, A.M., Basset, P., Galayko, D., Marty, F., Bourouina, T.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 288 KB

english, 2009

13

Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using $\hbox{Sm}_{2}\hbox{O}_{3}/\hbox{SiO}_{2}$ Dielectric Stack

Jian-Jun Yang,, Jing-De Chen,, Wise, R., Steinmann, P., Ming-Bin Yu,, Dim-Lee Kwong,, Ming-Fu Li,, Yee-Chia Yeo,, Chunxiang Zhu

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 409 KB

english, 2009

14

An Efficient Triple-Tandem Polymer Solar Cell

D. Zhao, X. Sun, C. Jiang, A. Kyaw, G. Lo, D. Kwong

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 319 KB

english, 2009

15

On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\hbox{p}^{+}\hbox{n}$ Junctions

E. Simoen, F. De Stefano, G. Eneman, B. De Jaeger, C. Claeys, F. Crupi

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 170 KB

english, 2009

16

A Novel Approach for Stability Analysis in Carbon Nanotube Interconnects

Fathi, Davood, Forouzandeh, Behjat

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 303 KB

english, 2009

17

Journal:

IEEE Electron Device Letters

Language:

english

File:

PDF, 509 KB

english,

18

$\hbox{HfO}_{2}$–III-Nitride RF Switch With Capacitively Coupled Contacts

Koudymov, A., Pala, N., Tokranov, V., Oktyabrsky, S., Gaevski, M., Jain, R., Yang, J., Hu, X., Shur, M., Gaska, R., Simin, G.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 222 KB

english, 2009

19

Metal-Gate FinFET Variation Analysis by Measurement and Compact Model

S. O'uchi, T. Matsukawa, T. Nakagawa, K. Endo, Yongxun Liu, T. Sekigawa, J. Tsukada, Y. Ishikawa, H. Yamauchi, K. Ishii, E. Suzuki, H. Koike, K. Sakamoto, M. Masahara

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 339 KB

english, 2009

20

Lai, F.-I., Ling, S.C., Hsieh, C.E., Hsueh, T.H., Hao-Chung Kuo,, Tien-Chang Lu,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 363 KB

english, 2009

21

Brannick, A., Zakhleniuk, N.A., Ridley, B.K., Shealy, J.R., Schaff, W.J., Eastman, L.F.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 372 KB

english, 2009

22

Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

Lee, R.T.-P., Lim, A.E.-J., Kian-Ming Tan,, Tsung-Yang Liow,, Dong Zhi Chi,, Yee-Chia Yeo,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 449 KB

english, 2009

23

HEMT With a Transparent Gate Electrode

Yi Pei,, Vampola, K.J., Zhen Chen,, Rongming Chu,, DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 273 KB

english, 2009

24

Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

Kamalanathan, D., Russo, U., Ielmini, D., Kozicki, M.N.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 304 KB

english, 2009

25

Short-Circuit Current Densities Exceeding 30 $ \hbox{mA/cm}^{2}$ by Use of Chirped Porous-Silicon Reflectors and Shallow Emitters in Thin-Film (20- $\mu\hbox{m}$) Epitaxial Silicon Solar Cells

Kuzma-Filipek, I., Van Nieuwenhuysen, K., Van Hoeymissen, J., Beaucarne, G., Van Kerschaver, E., Poortmans, J., Mertens, R.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 471 KB

english, 2009

26

High Turn Ratio and High Coupling Coefficient Transformer in 90-nm CMOS Technology

Heng-Ming Hsu,, Kun-Yu Chen,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 373 KB

english, 2009

27

Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation

Gudmundsson, V., Hellstrom, P.-E., Jun Luo,, Jun Lu,, Shi-Li Zhang,, Ostling, M.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 346 KB

english, 2009

28

Transparent Zinc Oxide Gate Metal–Oxide–Semiconductor Field-Effect Transistor for High-Responsivity Photodetector

Eujune Lee,, Dong-Il Moon,, Ji-Hwan Yang,, Keong Su Lim,, Yang-Kyu Choi,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 395 KB

english, 2009

29

Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- $k$ Gate Dielectric Material

Raval, H.N., Tiwari, S.P., Navan, R.R., Mhaisalkar, S.G., Rao, V.R.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 404 KB

english, 2009

30

Conductive Carbon as a Novel Front-End Electrode Material for a Trench DRAM

Boscke, T.S., Guerrero, G., Liebau, M., Uppal, S., Yu Pi Lee,, Pethe, W., Patz, M., Kleye, A., Su, P.-Y., Orth, A., Wen-Chung Liu,, Lutzen, J.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 228 KB

english, 2009

31

The Enhancement of the Resistance Window of TaN/GeTe/Cu Device by Controlling GeTe Film Structure

Sang-Jun Choi,, Jung-Hyun Lee,, Woo-Young Yang,, Tae-Wan Kim,, Ki-Hong Kim,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 189 KB

english, 2009

32

Deep-UV Curing of Poly(4-Vinyl Phenol) Gate Dielectric for Hysteresis-Free Organic Thin-Film Transistors

Se-Jin Choi,, Ju-Hyung Kim,, Lee, H.H.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 394 KB

english, 2009

33

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

Jaesik Yoon,, Hyejung Choi,, Dongsoo Lee,, Ju-Bong Park,, Joonmyoung Lee,, Dong-Jun Seong,, Yongkyu Ju,, Man Chang,, Seungjae Jung,, Hyunsang Hwang,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 303 KB

english, 2009

34

Gate Dielectric

Hyun-Sik Choi,, Seung-Ho Hong,, Rock-Hyun Baek,, Kyong-Taek Lee,, Chang-Yong Kang,, Jammy, R., Byoung-Hun Lee,, Sung-Woo Jung,, Yoon-Ha Jeong,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 296 KB

english, 2009

35

Zinc Tin Oxide Thin-Film-Transistor Enhancement/Depletion Inverter

Heineck, D.P., McFarlane, B.R., Wager, J.F.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 126 KB

english, 2009

36

RF Model of BEOL Vertical Natural Capacitor (VNCAP) Fabricated by 45-nm RF CMOS Technology and Its Verification

In Man Kang,, Seung-Jae Jung,, Tae-Hoon Choi,, Jae-Hong Jung,, Chulho Chung,, Han-Su Kim,, Kangwook Park,, Hansu Oh,, Hyun-Woo Lee,, Gwangdoo Jo,, Young-Kwang Kim,, Han-Gu Kim,, Kyu-Myung

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 496 KB

english, 2009

37

Distinguishing Between STI Stress and Delta Width in Gate Direct Tunneling Current of Narrow n-MOSFETs

Chen-Yu Hsieh,, Yi-Tang Lin,, Ming-Jer Chen,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 306 KB

english, 2009

38

Physical Insights on BJT-Based 1T DRAM Cells

Zhenming Zhou,, Fossum, J.G., Zhichao Lu,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 339 KB

english, 2009

39

Electrothermal Analysis of Breakdown in Carbon Nanofiber Interconnects

Yamada, T., Saito, T., Fabris, D., Yang, C.Y.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 201 KB

english, 2009

40

Gate-to-Source/Drain Nonoverlap Device for Soft-Program Immune Unified RAM (URAM)

Jin-Woo Han,, Chung-Jin Kim,, Sung-Jin Choi,, Dong-Hyun Kim,, Dong-Il Moon,, Yang-Kyu Choi,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 476 KB

english, 2009

41

An Organic-Based Diode–Memory Device With Rectifying Property for Crossbar Memory Array Applications

Yeow Hwee Teo, E., Chunfu Zhang,, Siew Lay Lim,, En-Tang Kang,, Daniel Chan,, Chunxiang Zhu,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 142 KB

english, 2009

42

Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs From Top-Down Approach

Runsheng Wang,, Jing Zhuge,, Ru Huang,, Dong-Won Kim,, Donggun Park,, Yangyuan Wang,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 517 KB

english, 2009

43

Select Device Disturb Phenomenon in TANOS NAND Flash Memories

Melde, Thomas, Beug, Marc Florian, Bach, Lars, Tilke, Armin Thomas, Knoefler, Roman, Bewersdorff-Sarlette, Ulrike, Beyer, Volkhard, Czernohorsky, Malte, Paul, Jan, Mikolajick, Thomas

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 337 KB

english, 2009

44

Fabrication and Properties of $\hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85} \hbox{Ti}_{3}\hbox{O}_{12}/\break\hbox{HfO}_{2}/\hbox{Si}$ Structure for Ferroelectric DRAM (FEDRAM) FET

Dan Xie,, Yongyuan Zang,, Yafeng Luo,, Tianling Ren,, Litian Liu,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 458 KB

english, 2009

45

Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique

Hui Zhao,, Raseong Kim,, Paul, A., Luisier, M., Klimeck, G., Fa-Jun Ma,, Rustagi, S.C., Samudra, G.S., Singh, N., Guo-Qiang Lo,, Dim-Lee Kwong,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 291 KB

english, 2009

46

Table of contents

Yuan, Yuexing, Lau, Wayne Bond, Su, Hui, Sun, Yang, Yi, Wei, Du, Yunhui, Christopher, Theodore, Lopez, Bernard, Wang, Yajing, Ma, Xin-Liang

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 66 KB

english, 2009