Realization of high mobilities at ultralow electron density...

Applied Physics Letters 1990 Vol. 56; Iss. 19

Realization of high mobilities at ultralow electron density in GaAs‐Al0.3Ga0.7As inverted heterojunctions

Kim, Dojin, Madhukar, A., Hu, Ke‐Zhong, Chen, Wei
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Volume:
56
Year:
1990
Language:
english
DOI:
10.1063/1.103074
File:
PDF, 664 KB
english, 1990
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