Volume 56; Issue 19

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Applied Physics Letters
Volume 56; Issue 19

Applied Physics Letters

Volume 56; Issue 19

1

Realization of high mobilities at ultralow electron density in GaAs‐Al0.3Ga0.7As inverted heterojunctions

Kim, Dojin, Madhukar, A., Hu, Ke‐Zhong, Chen, Wei

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 664 KB

english, 1990

2

Thermal modeling of continuous-wave end-pumped solid-state lasers

Innocenzi, M. E., Yura, H. T., Fincher, C. L., Fields, R. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 550 KB

english, 1990

3

Nanoindentation study of the mechanical properties of copper-nickel multilayered thin films

Cammarata, R. C., Schlesinger, T. E., Kim, C., Qadri, S. B., Edelstein, A. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 601 KB

english, 1990

4

Pyrolysis of trimethylgallium on GaAs(100) surfaces

Memmert, Ulrich, Yu, Ming L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 490 KB

english, 1990

5

Superconducting YBaCuO thin films on GaAs/AlGaAs

Rao, M. R., Tarsa, E. J., Samoska, L. A., English, J. H., Gossard, A. C., Kroemer, H., Petroff, P. M., Hu, E. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 614 KB

english, 1990

6

Oriented hydrocarbons transferred from a high performance lubricative amorphous C:H:Si film during sliding in a vacuum

Sugimoto, Iwao, Miyake, Shojiro

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 528 KB

english, 1990

7

Giant nonlinear optical rectification at 8–12 μm in asymmetric coupled quantum wells

Rosencher, E., Bois, Ph., Vinter, B., Nagle, J., Kaplan, D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 621 KB

english, 1990

8

Capacitance-voltage characteristics of alternating-current thin-film electroluminescent devices

McArthur, R. C., Davidson, J. D., Wager, J. F., Khormaei, I., King, C. N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 492 KB

english, 1990

9

Two-photon absorption in In1−x−yGaxAlyAs/InP waveguides at communications wavelengths

Villeneuve, A., Sundheimer, M., Finlayson, N., Stegeman, G. I., Morasca, S., Rigo, C., Calvani, R., De Bernardi, C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

10

Improving tunneling junction in amorphous silicon tandem solar cells

Shen, D. S., Schropp, R. E. I., Chatham, H., Hollingsworth, R. E., Bhat, P. K., Xi, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 519 KB

english, 1990

11

Unusual orientation relationship for a copper film on Si(111)

Knorr, D. B., Bai, P., Lu, T.-M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 606 KB

english, 1990

12

X-ray spectromicroscopy with a zone plate generated microprobe

Ade, Harald, Kirz, Janos, Hulbert, Steven L., Johnson, Erik D., Anderson, Erik, Kern, Dieter

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 614 KB

english, 1990

13

Alternative approach to nanocomposite synthesis by sputtering

Chow, G. M., Holtz, R. L., Pattnaik, A., Edelstein, A. S., Schlesinger, T. E., Cammarata, R. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 602 KB

english, 1990

14

Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure

Geddes, N. J., Sambles, J. R., Jarvis, D. J., Parker, W. G., Sandman, D. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 540 KB

english, 1990

15

Photosensitization of diamond thin films

Mort, J., Okumura, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 530 KB

english, 1990

16

Formation of InxGa1−xAs/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt-solidification process

Chang, Y., Chou, S. Y., Sigmon, T. W., Marshall, A. F., Weiner, K. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 707 KB

english, 1990

17

In situ growth of DyBa2Cu3O7−x thin films by molecular beam epitaxy

Johnson, B. R., Beauchamp, K. M., Wang, T., Liu, J-X., McGreer, K. A., Wan, J-C., Tuominen, M., Zhang, Y-J., Mecartney, M. L., Goldman, A. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 640 KB

english, 1990

18

Femtosecond dynamics of the nonlinear index near the band edge in AlGaAs waveguides

Anderson, K. K., LaGasse, M. J., Wang, C. A., Fujimoto, J. G., Haus, H. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 562 KB

english, 1990

19

Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon

Parsons, G. N., Wang, C., Williams, M. J., Lucovsky, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 525 KB

english, 1990

20

Effect of subband mixing and subband dispersion on the exciton line shape of superlattices

Zhou, J. F., Jung, P. S., Song, J. J., Tu, C. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 469 KB

english, 1990

21

Threshold current reduction in patterned quantum well semiconductor lasers grown by molecular beam epitaxy

Kapon, E., Simhony, S., Harbison, J. P., Florez, L. T., Worland, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 505 KB

english, 1990

22

Interpretation of photovoltaic pulses in normal YBa2Cu3O7

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 392 KB

english, 1990

23

Effects of stress in TiSi2 gate metal-oxide-silicon structures

Reuters, P. J., Offenberg, M., Balk, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 383 KB

english, 1990

24

Evidence of native gallium antisite defects in semi-insulating liquid-encapsulated Czochralski-grown GaAs

Alaya, S., Maaref, H., von Bardeleben, H. J., Bourgoin, J. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 428 KB

english, 1990

25

Current confinement in a GaAs/AlGaAs heterostructure by in situ laser-patterned desorption of a current-blocking quantum well

Epler, J. E., Treat, D. W., Paoli, T. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 615 KB

english, 1990

26

Complete single-mode continuous-wave operation in 180° mode AlGaAs phased array lasers with dummy stripes

Sagawa, M., Kajimura, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 404 KB

english, 1990

27

Topographic study on an InAs lattice-mismatched heteroepitaxial layer grown on GaAs by means of x-ray scattering radiography

Suzuki, Yoshifumi, Chikaura, Yoshinori, Akazaki, Tatsushi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 598 KB

english, 1990

28

Far-infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wells

Kim, J.-H., Bhattacharya, P. K., Singh, J., Gulari, E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 417 KB

english, 1990

29

Measurement of AlGaAs/AlGaAs interface recombination velocities using time-resolved photoluminescence

Timmons, M. L., Colpitts, T. S., Venkatasubramanian, R., Keyes, B. M., Dunlavy, D. J., Ahrenkiel, R. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 500 KB

english, 1990

30

Impurity-induced 900 °C (2×2) surface reconstruction of SrTiO3(100)

Andersen, Jens E. T., Mo̸ller, Preben J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 594 KB

english, 1990

31

Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

Yang, Ying Jay, Dziura, Thaddeus G., Wang, S. C., Hsin, Wei, Wang, Shyh

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 472 KB

english, 1990

32

1.3 μm monolithically integrated waveguide-interdigitated metal-semiconductor-metal photodetector on a GaAs substrate

Jagannath, C., Silletti, A., Choudhury, A. N. M. M., Elman, B., Melman, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 550 KB

english, 1990

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