A novel 4H–SiC SOI-MESFET with a modified breakdown voltage mechanism for improving the electrical performance
Moghadam, Hamid Amini, Orouji, Ali A, Dideban, AVolume:
27
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/27/1/015001
Date:
January, 2012
File:
PDF, 1.62 MB
english, 2012