Volume 27; Issue 1

Semiconductor Science and Technology

Volume 27; Issue 1

1

Symmetrical current–voltage characteristic of a metal–semiconductor–metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Elhadidy, H, Sikula, J, Franc, J

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 749 KB

english, 2012

2

Galvanomagnetic properties and electronic structure of Pb 1− x − y Sn x V y Te under pressure

Skipetrov, E P, Golovanov, A N, Kovalev, B B, Knotko, A V, Slyn’ko, E I, Slyn’ko, V E

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.05 MB

english, 2012

3

A novel 4H–SiC SOI-MESFET with a modified breakdown voltage mechanism for improving the electrical performance

Moghadam, Hamid Amini, Orouji, Ali A, Dideban, A

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.62 MB

english, 2012

4

Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

Cheetham, K J, Carrington, P J, Krier, A, Patel, I I, Martin, F L

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 648 KB

english, 2012

5

Analytical theory of a small signal modulation response of a transistor laser with dots-in-well in the base

Basu, Rikmantra, Mukhopadhyay, Bratati, Basu, P K

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 754 KB

english, 2012

6

Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

Rodilla, H, González, T, Moschetti, G, Grahn, J, Mateos, J

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 403 KB

english, 2012

7

Improved photoelectrochemical water splitting efficiency of nanoporous GaN photoanode

Ryu, Sang-Wan, Zhang, Yu, Leung, Benjamin, Yerino, Christopher, Han, Jung

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.51 MB

english, 2012

8

Optical triggering of 12 kV, 100 A 4H-SiC thyristors

Rumyantsev, S L, Levinshtein, M E, Shur, M S, Saxena, T, Zhang, Q J, Agarwal, A K, Palmour, J W

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 719 KB

english, 2012

9

Effects of thermally generated carrier and temperature dependence mobility in InSb photoconductive detector under CW 10.6 µm laser irradiation

Jiang, Tian, Zheng, Xin, Cheng, Xiang-Ai, Xu, Zhongjie, Jiang, Hou-Man, Lu, Qi-Sheng

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.04 MB

english, 2012

10

Optical study of GaAs quantum dots embedded into AlGaAs nanowires

Kats, V N, Kochereshko, V P, Platonov, A V, Chizhova, T V, Cirlin, G E, Bouravleuv, A D, Samsonenko, Yu B, Soshnikov, I P, Ubyivovk, E V, Bleuse, J, Mariette, H

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 880 KB

english, 2012

11

Temperature dependence of electron transport on a bound-to-continuum terahertz quantum cascade laser

Han, Y J, Cao, J C

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 442 KB

english, 2012

12

Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x\ssty{/}γ-ray detectors

Kosyachenko, L A, Lambropoulos, C P, Aoki, T, Dieguez, E, Fiederle, M, Loukas, D, Sklyarchuk, O V, Maslyanchuk, O L, Grushko, E V, Sklyarchuk, V M, Crocco, J, Bensalah, H

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 633 KB

english, 2012

13

Electrical, spectral and optical performance of yellow–green and amber micro-pixelated InGaN light-emitting diodes

Gong, Z, Liu, N Y, Tao, Y B, Massoubre, D, Xie, E Y, Hu, X D, Chen, Z Z, Zhang, G Y, Pan, Y B, Hao, M S, Watson, I M, Gu, E, Dawson, M D

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.27 MB

english, 2012

14

Growth and characterization of a -plane InGaN/GaN multiple quantum well LEDs grown on r -plane sapphire

Song, Keun Man, Kim, Jong-Min, Shin, Chan-Soo, Hwang, Sung-Min, Yoon, Dae-Ho

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.04 MB

english, 2012

15

Greetings from the new Editor-in-Chief

Nielsch, Kornelius

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 44 KB

english, 2012

16

Photoluminescent properties of semiconducting Tl 6 I 4 Se

Cho, N K, Peters, J A, Liu, Z, Wessels, B W, Johnsen, S, Kanatzidis, M G, Song, J H, Jin, H, Freeman, A

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 303 KB

english, 2012

17

High-power, spectrally stabilized, near-diffraction-limited 970 nm laser light source based on truncated-tapered semiconductor optical amplifiers with low confinement factors

Wang, X, Erbert, G, Wenzel, H, Eppich, B, Crump, P, Ginolas, A, Fricke, J, Bugge, F, Spreemann, M, Tränkle, G

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 507 KB

english, 2012

18

Role of oxygen vacancies in visible emission and transport properties of indium oxide nanowires

Gali, Pradeep, Kuo, Fang-Ling, Shepherd, Nigel, Philipose, U

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 3.11 MB

english, 2012

19

Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

Galeti, H V A, Galvão Gobato, Y, Gordo, V O, dos Santos, L F, Brasil, M J S P, López-Richard, V, Marques, G E, Orlita, M, Kunc, J, Maude, D K, Henini, M, Airey, R J

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 116 KB

english, 2012

20

The parameter extraction including field-plate effect of 0.25 µm 12 V LDMOSFETs

Hu, Chih-Min, Lo, Kuo-Hsuan, Hung, Chung-Yu, Chu, Chun-Hsueh, Chang, Da-Chiang, Liu, Jih-Hsin, Gong, Jeng, Huang, Chih-Fang

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 55 KB

english, 2012

21

DLTS of p-type Czochralski Si wafers containing processing-induced macropores

Simoen, E, Depauw, V, Gordon, I, Poortmans, J

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.28 MB

english, 2012

22

Modal gain and its diameter dependence in single-ZnO micro- and nanowires

Richters, J P, Kalden, J, Gnauck, M, Ronning, C, Dietrich, C P, von Wenckstern, H, Grundmann, M, Gutowski, J, Voss, T

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 823 KB

english, 2012

23

Influence of a highly doped buried layer for HfInZnO thin-film transistors

Chong, Eugene, Lee, Sang Yeol

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 291 KB

english, 2012

24

Effects of a Ni alloying element on Al–Ni metallization

Lee, K W, Han, D M, Jeong, K H, Lee, K B, Lee, J G, Jeong, C O, Bae, Y H, Ruh, H, Kim, C S, Lee, E G

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 224 KB

english, 2012