The Dependence of Retention Time on Gate Length in UTBOX...

IEEE Electron Device Letters 2012 Vol. 33; Iss. 7

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering

Nicoletti, T., Aoulaiche, M., Almeida, L.M., Santos, S.D., Martino, J.A., Veloso, A., Jurczak, M., Simoen, E., Claeys, C.
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Volume:
33
Year:
2012
Language:
english
DOI:
10.1109/led.2012.2196968
File:
PDF, 387 KB
english, 2012
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