Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
Osburn, C. M., Kim, I., Han, S. K., De, I., Yee, K. F., Gannavaram, S., Lee, S. J., Lee, C.-H., Luo, Z. J., Zhu, W., Hauser, J. R., Kwong, D.-L., Lucovsky, G., Ma, T. P., Ozturk, M. C.Volume:
46
Year:
2002
Language:
english
DOI:
10.1147/rd.462.0299
File:
PDF, 310 KB
english, 2002