Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics
S. Schamm-Chardon, P.E. Coulon, L. Lamagna, C. Wiemer, S. Baldovino, M. FanciulliVolume:
88
Year:
2011
Language:
english
DOI:
10.1016/j.mee.2010.10.012
File:
PDF, 433 KB
english, 2011