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Volume 88; Issue 4
Main
Microelectronic Engineering
Volume 88; Issue 4
Microelectronic Engineering
Volume 88; Issue 4
1
Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials
M. Moreau
,
D. Munteanu
,
J.L. Autran
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 444 KB
Your tags:
english, 2011
2
Defect formation and annihilation at interfaces
L. Tsetseris
,
S.T. Pantelides
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 801 KB
Your tags:
english, 2011
3
Germanium substrate loss during thermal processing
R.J. Kaiser
,
S. Koffel
,
P. Pichler
,
A.J. Bauer
,
B. Amon
,
L. Frey
,
H. Ryssel
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 463 KB
Your tags:
english, 2011
4
Experimental and theoretical investigation of defects at (1 0 0) Si1−xGex/oxide interfaces
M. Houssa
,
G. Pourtois
,
M. Meuris
,
M.M. Heyns
,
V.V. Afanas’ev
,
A. Stesmans
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 717 KB
Your tags:
english, 2011
5
Laser annealing of SiGe and Ge based devices
G. Fisicaro
,
A. La Magna
,
G. Piccitto
,
V. Privitera
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 348 KB
Your tags:
english, 2011
6
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
Y.H. Chang
,
M.L. Huang
,
P. Chang
,
C.A. Lin
,
Y.J. Chu
,
B.R. Chen
,
C.L. Hsu
,
J. Kwo
,
T.W. Pi
,
M. Hong
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 1000 KB
Your tags:
english, 2011
7
Multi-technique characterisation of MOVPE-grown GaAs on Si
C.S. Wong
,
N.S. Bennett
,
P.J. McNally
,
B. Galiana
,
P. Tejedor
,
M. Benedicto
,
J.M. Molina-Aldareguia
,
S. Monaghan
,
P.K. Hurley
,
K. Cherkaoui
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 938 KB
Your tags:
english, 2011
8
The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates
M. Gassoumi
,
M.M. Ben Salem
,
S. Saadaoui
,
B. Grimbert
,
J. Fontaine
,
C. gaquiere
,
H. Maaref
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 312 KB
Your tags:
english, 2011
9
Diffusion and doping issues in germanium
H. Bracht
,
S. Schneider
,
R. Kube
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 393 KB
Your tags:
english, 2011
10
Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt
Toshinori Taishi
,
Hideaki Ise
,
Yu Murao
,
Takayuki Ohsawa
,
Yuki Tokumoto
,
Yutaka Ohno
,
Ichiro Yonenaga
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 406 KB
Your tags:
english, 2011
11
3D monolithic integration: Technological challenges and electrical results
M. Vinet
,
P. Batude
,
C. Tabone
,
B. Previtali
,
C. LeRoyer
,
A. Pouydebasque
,
L. Clavelier
,
A. Valentian
,
O. Thomas
,
S. Michaud
,
L. Sanchez
,
L. Baud
,
A. Roman
,
V. Carron
,
F. Nemouchi
,
V. Mazzocchi
,
H. Gr
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 931 KB
Your tags:
english, 2011
12
Optical power monitors in Ge monolithically integrated on SOI chips
L. Colace
,
V. Sorianello
,
M. Romagnoli
,
L. Socci
,
G. Assanto
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 608 KB
Your tags:
english, 2011
13
Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
G. Saint-Girons
,
J. Cheng
,
A. Chettaoui
,
J. Penuelas
,
B. Gobaut
,
P. Regreny
,
L. Largeau
,
G. Patriarche
,
Claude Botella
,
G. Hollinger
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 567 KB
Your tags:
english, 2011
14
Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates
L. Lamagna
,
M. Fusi
,
S. Spiga
,
M. Fanciulli
,
G. Brammertz
,
C. Merckling
,
M. Meuris
,
A. Molle
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 579 KB
Your tags:
english, 2011
15
Systematic study of shallow junction formation on germanium substrates
Geert Hellings
,
Erik Rosseel
,
Trudo Clarysse
,
Dirch Hjorth Petersen
,
Ole Hansen
,
Peter Folmer Nielsen
,
Eddy Simoen
,
Geert Eneman
,
Brice De Jaeger
,
Thomas Hoffmann
,
Kristin De Meyer
,
Wilfried Vandervor
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 398 KB
Your tags:
english, 2011
16
Simulation of hole-mobility in doped relaxed and strained Ge
Jeremy R. Watling
,
Craig Riddet
,
Kah H. Chan
,
Asen Asenov
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 472 KB
Your tags:
english, 2011
17
Design and analysis of the As implant-free quantum-well device structure
Brahim Benbakhti
,
Karol Kalna
,
KahHou Chan
,
Ewan Towie
,
Geert Hellings
,
Geert Eneman
,
Kristin De Meyer
,
Marc Meuris
,
Asen Asenov
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 553 KB
Your tags:
english, 2011
18
The effect of Se and Se/Al passivation on the oxidation of Ge
D. Tsoutsou
,
Y. Panayiotatos
,
S. Galata
,
A. Sotiropoulos
,
G. Mavrou
,
E. Golias
,
A. Dimoulas
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 468 KB
Your tags:
english, 2011
19
Stability of Frenkel pairs in Si(1 0 0) surface in the presence of germanium and oxygen atoms
S. Fetah
,
A. Chikouche
,
A. Dkhissi
,
G. Landa
,
P. Pochet
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 363 KB
Your tags:
english, 2011
20
Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materials
Alessandro Molle
,
Guy Brammertz
,
Athanasios Dimoulas
,
Chiara Marchiori
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 158 KB
Your tags:
english, 2011
21
Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures
E. Miranda
,
E. O’Connor
,
P.K. Hurley
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 444 KB
Your tags:
english, 2011
22
Ge volatilization products in high-k gate dielectrics
E. Golias
,
L. Tsetseris
,
A. Dimoulas
,
S.T. Pantelides
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 998 KB
Your tags:
english, 2011
23
New opportunities for SiGe and Ge channel p-FETs
S.W. Bedell
,
N. Daval
,
A. Khakifirooz
,
P. Kulkarni
,
K. Fogel
,
A. Domenicucci
,
D.K. Sadana
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 1.06 MB
Your tags:
english, 2011
24
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance–voltage method
Gvidas Astromskas
,
Kristian Storm
,
Philippe Caroff
,
Magnus Borgström
,
Erik Lind
,
Lars-Erik Wernersson
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 314 KB
Your tags:
english, 2011
25
InGaAs and Ge MOSFETs with high κ dielectrics
W.C. Lee
,
P. Chang
,
T.D. Lin
,
L.K. Chu
,
H.C. Chiu
,
J. Kwo
,
M. Hong
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 1.23 MB
Your tags:
english, 2011
26
Solid phase epitaxial growth of Dy-germanide films on Ge(0 0 1) substrates
Md. Nurul Kabir Bhuiyan
,
Mariela Menghini
,
Jin Won Seo
,
Jean-Pierre Locquet
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 972 KB
Your tags:
english, 2011
27
Surface activation using oxygen and nitrogen radical for Ge–Si Avalanche photodiode integration
Ki Yeol Byun
,
Isabelle Ferain
,
John Hayes
,
Ran Yu
,
Farzan Gity
,
Cindy Colinge
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 619 KB
Your tags:
english, 2011
28
Electron density of states at Ge/oxide interfaces due to formation
Jan Felix Binder
,
Peter Broqvist
,
Alfredo Pasquarello
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 567 KB
Your tags:
english, 2011
29
H2S molecular beam passivation of Ge(0 0 1)
C. Merckling
,
Y.C. Chang
,
C.Y. Lu
,
J. Penaud
,
M. El-Kazzi
,
F. Bellenger
,
G. Brammertz
,
M. Hong
,
J. Kwo
,
M. Meuris
,
J. Dekoster
,
M.M. Heyns
,
M. Caymax
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 631 KB
Your tags:
english, 2011
30
Bonding and gap states at GaAs-oxide interfaces
John Robertson
,
Liang Lin
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 659 KB
Your tags:
english, 2011
31
Epitaxial growth of Fe/MgO/Ge(0 0 1) heterostructures
M. Cantoni
,
D. Petti
,
C. Rinaldi
,
R. Bertacco
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 529 KB
Your tags:
english, 2011
32
Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium
S. Koffel
,
R.J. Kaiser
,
A.J. Bauer
,
B. Amon
,
P. Pichler
,
J. Lorenz
,
L. Frey
,
P. Scheiblin
,
V. Mazzocchi
,
J.-P. Barnes
,
A. Claverie
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 466 KB
Your tags:
english, 2011
33
Thermal evaporation of Ge on Si for near infrared detectors: Material and device characterization
V. Sorianello
,
L. Colace
,
G. Assanto
,
A. Notargiacomo
,
N. Armani
,
F. Rossi
,
C. Ferrari
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 408 KB
Your tags:
english, 2011
34
Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET
K.H. Chan
,
B. Benbakhti
,
C. Riddet
,
J.R. Watling
,
A. Asenov
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 630 KB
Your tags:
english, 2011
35
Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical properties
S.M. Pietralunga
,
M. Feré
,
M. Lanata
,
G. Radnóczi
,
F. Misják
,
A. Lamperti
,
M. Martinelli
,
P.M. Ossi
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 831 KB
Your tags:
english, 2011
36
Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix
E.M.F. Vieira
,
S.R.C. Pinto
,
S. Levichev
,
A.G. Rolo
,
A. Chahboun
,
M. Buljan
,
N.P. Barradas
,
E. Alves
,
S. Bernstorff
,
O. Conde
,
M.J.M. Gomes
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 588 KB
Your tags:
english, 2011
37
Damages of Ge devices by 2-MeV electrons and their recovery
H. Ohyama
,
K. Sakamoto
,
H. Sukizaki
,
K. Takakura
,
M. Tsukamoto
,
K. Matsuo
,
I. Tsunoda
,
I. Kato
,
T. Nakashima
,
E. Simoen
,
B. De Jaeger
,
C. Claeys
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 386 KB
Your tags:
english, 2011
38
Scanning tunneling microscopy study of the interfacial bonding structures of Ga2O and In2O/In0.53Ga0.47As(0 0 1)
Jian Shen
,
Darby L. Feldwinn
,
Wilhelm Melitz
,
Ravi Droopad
,
Andrew C. Kummel
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 1.38 MB
Your tags:
english, 2011
39
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
B. Vincent
,
Y. Shimura
,
S. Takeuchi
,
T. Nishimura
,
G. Eneman
,
A. Firrincieli
,
J. Demeulemeester
,
A. Vantomme
,
T. Clarysse
,
O. Nakatsuka
,
S. Zaima
,
J. Dekoster
,
M. Caymax
,
R. Loo
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 1.09 MB
Your tags:
english, 2011
40
Numerical simulation of III–V FET architectures for high frequency and low consumption applications
Ming Shi
,
Jérôme Saint-Martin
,
Arnaud Bournel
,
Philippe Dollfus
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 1.03 MB
Your tags:
english, 2011
41
Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (1 0 0)Ge/GeO2 interface
S. Baldovino
,
A. Molle
,
M. Fanciulli
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 562 KB
Your tags:
english, 2011
42
Micro-Raman characterization of Germanium thin films evaporated on various substrates
V. Sorianello
,
L. Colace
,
G. Assanto
,
M. Nardone
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 578 KB
Your tags:
english, 2011
43
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition
A. Lamperti
,
S. Baldovino
,
A. Molle
,
M. Fanciulli
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 620 KB
Your tags:
english, 2011
44
Study of deep level defect behavior in undoped n-InP (1 0 0) after rapid thermal annealing
V. Janardhanam
,
A. Ashok Kumar
,
V. Rajagopal Reddy
,
Chel Jong Choi
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 227 KB
Your tags:
english, 2011
45
Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (0 0 1)
C. Wiemer
,
S. Baldovino
,
L. Lamagna
,
M. Perego
,
S. Schamm-Chardon
,
M. Fanciulli
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 535 KB
Your tags:
english, 2011
46
Smooth, 3D Ge transistor channels by heteroepitaxial growth
Hans S. Cho
,
Theodore I. Kamins
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 375 KB
Your tags:
english, 2011
47
Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy
H. Ohyama
,
N. Naka
,
K. Takakura
,
I. Tsunoda
,
M.B. Gonzalez
,
E. Simoen
,
C. Claeys
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 382 KB
Your tags:
english, 2011
48
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface
M. Fusi
,
L. Lamagna
,
S. Spiga
,
M. Fanciulli
,
G. Brammertz
,
C. Merckling
,
M. Meuris
,
A. Molle
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 775 KB
Your tags:
english, 2011
49
Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction
H. Fitouri
,
I. Moussa
,
A. Rebey
,
B. El Jani
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 483 KB
Your tags:
english, 2011
50
Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels
K. Sawano
,
K. Toyama
,
R. Masutomi
,
T. Okamoto
,
K. Arimoto
,
K. Nakagawa
,
N. Usami
,
Y. Shiraki
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 502 KB
Your tags:
english, 2011
51
Epitaxial growth of Dy2O3 thin films on epitaxial Dy-germanide films on Ge(0 0 1) substrates
Md. Nurul Kabir Bhuiyan
,
Mariela Menghini
,
Jin Won Seo
,
Jean-Pierre Locquet
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 636 KB
Your tags:
english, 2011
52
Inside Front Cover - Editorial Board
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 26 KB
Your tags:
english, 2011
53
Table of Contents
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 118 KB
Your tags:
english, 2011
54
Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics
S. Schamm-Chardon
,
P.E. Coulon
,
L. Lamagna
,
C. Wiemer
,
S. Baldovino
,
M. Fanciulli
Journal:
Microelectronic Engineering
Year:
2011
Language:
english
File:
PDF, 433 KB
Your tags:
english, 2011
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