Charge accumulation in the buried oxide of SOI structures...

Semiconductor Science and Technology 2012 / 06 Vol. 27; Iss. 6

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO 2 interface under γ-irradiation: effect of preliminary ion implantation

Naumova, O V, Fomin, B I, Ilnitsky, M A, Popov, V P
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Volume:
27
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/27/6/065014
Date:
June, 2012
File:
PDF, 675 KB
english, 2012
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