Volume 27; Issue 6

Semiconductor Science and Technology

Volume 27; Issue 6

1

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO 2 interface under γ-irradiation: effect of preliminary ion implantation

Naumova, O V, Fomin, B I, Ilnitsky, M A, Popov, V P

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 675 KB

english, 2012

2

On the origin of blue emission from ZnO quantum dots synthesized by a sol–gel route

Han, Li-Li, Cui, Lan, Wang, Wei-Hua, Wang, Jiang-Long, Du, Xi-Wen

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.75 MB

english, 2012

3

Half-Heusler compounds: novel materials for energy and spintronic applications

Casper, F, Graf, T, Chadov, S, Balke, B, Felser, C

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.18 MB

english, 2012

4

Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure

Uchino, T, Gili, E, Tan, L, Buiu, O, Hall, S, Ashburn, P

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 358 KB

english, 2012

5

Detection of oxygen vacancy defect states in oxide nanobelts by using thermally stimulated current spectroscopy

Berengue, Olivia M, Kanashiro, Mariana K, Chiquito, Adenilson J, Dalmaschio, Cleocir J, Leite, Edson R

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 476 KB

english, 2012

6

Effect of doping on electronic states in B-doped polycrystalline CVD diamond films

Elsherif, O S, Vernon-Parry, K D, Evans-Freeman, J H, May, P W

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.09 MB

english, 2012

7

Application of multi-subband self-consistent energy balance method to terahertz quantum cascade lasers

Slingerland, Philip, Baird, Christopher, Giles, Robert H

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 618 KB

english, 2012

8

Middle-ultraviolet-enhanced photodetectors based on Mg 0.4 Zn 0.6 O/ZnO homojunction with a high selectivity for 300 nm around light

Zhu, Yongdan, Zhou, Hai, Fang, Guojia, Li, Meiya

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 769 KB

english, 2012

9

The role of growth temperature and Se flux on Cu(In,Ga)Se 2 thin film deposited on a stainless steel substrate and solar cell

Li, Boyan, Zhang, Yi, Wang, Biao, He, Jingjing, Wu, Li, Sun, Yun

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 899 KB

english, 2012

10

Surface plasmonic enhanced polarimetric longwave infrared photodetection with band pass spectral filtering

Vasinajindakaw, Puminun, Vaillancourt, Jarrod, Gu, Guiru, Lu, Xuejun

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 810 KB

english, 2012

11

A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO 2 /Pt nonvolatile memory with 1T1R architecture

Wu, Ming-Chi, Jang, Wen-Yueh, Lin, Chen-Hsi, Tseng, Tseung-Yuen

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.95 MB

english, 2012

12

Modelling the spectral emission of multi-section quantum dot superluminescent light-emitting diodes

Crowley, M T, Patel, N, Saiz, T A, Emawy, M El, Nilsen, T A, Naderi, N A, Mukherjee, S D, Fimland, B O, Lester, L F

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 826 KB

english, 2012

13

Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

Vasallo, B G, Rodilla, H, González, T, Moschetti, G, Grahn, J, Mateos, J

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 2.31 MB

english, 2012

14

Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si/SiGe:C and InP/InGaAs HBTs

Ramirez-Garcia, E, Aniel, F P, Enciso-Aguilar, M A, Riet, M, Zerounian, N

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 642 KB

english, 2012

15

Integrated AlGaN quadruple-band ultraviolet photodetectors

Gökkavas, Mutlu, Butun, Serkan, Caban, Piotr, Strupinski, Wlodek, Ozbay, Ekmel

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 885 KB

english, 2012

16

Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

Kang, Jiyeon, Lee, Su Jeong, Kim, Chul-Hong, Chae, Gee Sung, Jun, Myungchul, Hwang, Yong Kee, Lee, Woong, Myoung, Jae-Min

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 958 KB

english, 2012

17

Investigation of plasma-oxidized aluminium as a gate dielectric for AlGaN/GaN MISHFETs

Hahn, Herwig, Alam, Assadullah, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 427 KB

english, 2012

18

Improvement of electrostatic discharge characteristics of InGaN/GaN MQWs light-emitting diodes by inserting an n + -InGaN electron injection layer and a p-InGaN/GaN hole injection layer

Jia, Chuanyu, Zhong, Cantao, Yu, Tongjun, Wang, Zhe, Tong, Yuzhen, Zhang, Guoyi

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 421 KB

english, 2012

19

Electron spin rephasing in n-type (0 0 1) GaAs quantum wells

Shen, K, Wu, M W

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.55 MB

english, 2012

20

Point contact to single-crystalline diamond

Mareš, Jiří J, Hubík, Pavel, Uxa, Štěpán, Krištofik, Jozef, Kozak, Halyna

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 438 KB

english, 2012

21

Tunneling currents in a spherically shaped MIS structure

Vexler, M I, Grekhov, I V

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 3.06 MB

english, 2012

22

Controlling the shape and gap width of silicon electrodes using local anodic oxidation and anisotropic TMAH wet etching

Rouhi, Jalal, Mahmud, Shahrom, Hutagalung, Sabar Derita, Naderi, Nima, Kakooei, Saeid, Abdullah, Mat Johar

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 554 KB

english, 2012

23

Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

Lee, Ching-Sung, Hung, Chun-Tse, Chou, Bo-Yi, Hsu, Wei-Chou, Liu, Han-Yin, Ho, Chiu-Sheng, Lai, Ying-Nan

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 367 KB

english, 2012

24

Work function characterization of solution-processed cobalt silicide

Ullah, Syed Shihab, Robinson, Matt, Hoey, Justin, Driver, M Sky, Caruso, A N, Schulz, Douglas L

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.07 MB

english, 2012

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