Channel-Length Dependence of Low-Field Mobility in...

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

Poli, S., Pala, M.G.
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Volume:
30
Year:
2009
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2009.2031418
File:
PDF, 338 KB
english, 2009
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