Volume 30; Issue 11

IEEE Electron Device Letters

Volume 30; Issue 11

1

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

Poli, S., Pala, M.G.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 338 KB

english, 2009

2

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Alomari, M., Medjdoub, F., Carlin, J.-F., Feltin, E., Grandjean, N., Chuvilin, A., Kaiser, U., Gaquiere, C., Kohn, E.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 450 KB

english, 2009

3

Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications

Feng Zhao,, Islam, M.M., Muzykov, P., Bolotnikov, A., Sudarshan, T.S.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 349 KB

english, 2009

4

Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell

H. Ma, Y. Chou, J. Chiu, Tahui Wang, S. Ku, N. Zou, V. Chen, W. Lu, K. Chen, Chih-yuan Lu

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 262 KB

english, 2009

5

Anomalous Capacitance Induced by GIDL in P-Channel LTPS TFTs

Chia-sheng Lin, Ying-chung Chen, Ting-chang Chang, Shih-ching Chen, Fu-yen Jian, Hung-wei Li, Te-chih Chen, Chi-feng Weng, Jin Lu, Wei-che Hsu

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 441 KB

english, 2009

6

Journal:

IEEE Electron Device Letters

Language:

english

File:

PDF, 569 KB

english,

7

High-Frequency Noise Modeling of InGaP/GaAs HBT With Base-Contact Capacitance and AC Current Crowding Effect

Shou-chien Huang, Wen-bin Tang, Yue-ming Hsin

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 552 KB

english, 2009

8

High-Temperature Stability of Lasing Wavelength in GaAsSb/GaAs QW Lasers

Cheng-Tien Wan,, Yan-Kuin Su,, Chuang, R.W., Hsin-Chieh Yu,, Chun-Yuan Huang,, Yi-Shin Wang,, Wei-Cheng Chen,, Wei-Heng Lin,, Pilkuhn, M.H.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 394 KB

english, 2009

9

Optimization of RF Performance of Metallic Source/Drain SOI MOSFETs Using Dopant Segregation at the Schottky Interface

Valentin, R., Dubois, E., Larrieu, G., Raskin, J.-P., Dambrine, G., Breil, N., Danneville, F.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 289 KB

english, 2009

10

Experimental Investigations of Electron Mobility in Silicon Nanowire nMOSFETs on (110) Silicon-on-Insulator

Jiezhi Chen,, Saraya, T., Hiramoto, T.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 345 KB

english, 2009

11

Short-Channel-Effect Modeling of DG-FETs Using Voltage-Doping Transformation Featuring FD/PD Modes

Ze Yuan,, Zhiping Yu,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 140 KB

english, 2009

12

Improved Electrical Performance and Uniformity of MILC Poly-Si TFTs Manufactured Using Drive-In Nickel-Induced Lateral Crystallization

Chih-Pang Chang,, Wu, Y.-C.S.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 441 KB

english, 2009

13

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

Wei-Yip Loh,, Etienne, H., Coss, B., Ok, I., Turnbaugh, D., Spiegel, Y., Torregrosa, F., Banti, J., Roux, L., Pui-Yee Hung,, Jungwoo Oh,, Sassman, B., Radar, K., Majhi, P., Hsing-Huang Tseng,, Jam

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 295 KB

english, 2009

14

Effective Dielectric Constant Method for a Planar Helix With Straight-Edge Connections

Chua, C., Aditya, S., Zhongxiang Shen,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 413 KB

english, 2009

15

Mechanism of Increased High-Frequency Channel Noise With PECVD SiN Passivation in AlGaN/GaN HEMTs

Liu, Z.H., Ng, G.I., Arulkumaran, S.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 323 KB

english, 2009

16

Dynamic Analysis of a Si/SiGe-Based Impact Ionization Avalanche Transit Time Photodiode With an Ultrahigh Gain-Bandwidth Product

Shi, J.-W., Kuo, F.M., Hong, F.-C., Wu, Y.-S.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 448 KB

english, 2009

17

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

Hung-Wen Huang,, Chung-Hsiang Lin,, Zhi-Kai Huang,, Kang-Yuan Lee,, Chang-Chin Yu,, Hao-Chung Kuo,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 294 KB

english, 2009

18

Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for nor-Type Flash Memory

Kuan-Ti Wang,, Tien-Sheng Chao,, Tsung-Yu Chiang,, Woei-Cherng Wu,, Po-Yi Kuo,, Yi-Hong Wu,, Yu-Lun Lu,, Chia-Chun Liao,, Wen-Luh Yang,, Chien-Hsing Lee,, Tsung-Min Hsieh,, Jhyy-Cheng Liou,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 427 KB

english, 2009

19

W-Band Wireless Data Transmission by the Integration of a Near-Ballistic Unitraveling-Carrier Photodiode With a Horn Antenna Fed by a Quasi-Yagi Radiator

Kuo, F.-M., Shi, J.-W., Shao-Ning Wang,, Nan-Wei Chen,, Po-Tsung Shih,, Chun-Ting Lin,, Wen-Jr Jiang,, Er-Zih Wong,, Chen, J., Sien Chi,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 259 KB

english, 2009

20

Conjugated Polymer Films for Piezoresistive Stress Sensing

Zhong, G.Y., Zhang, Y.Q., Cao, X.A.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 384 KB

english, 2009

21

Si/SiGe Resonant Interband Tunneling Diodes Incorporating $\delta$-Doping Layers Grown by Chemical Vapor Deposition

Si-Young Park,, Anisha, R., Berger, P.R., Loo, R., Ngoc Duy Nguyen,, Takeuchi, S., Caymax, M.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 145 KB

english, 2009

22

Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs

Nam-Hyun Lee,, Hwan-Wook Choi,, Heesung Kang,, Bongkoo Kang,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 243 KB

english, 2009

23

Correction to "An Organic-Based Diode-Memory Device With Rectifying Property for Crossbar Memory Array Applications"

Teo, Eric Yeow Hwee, Zhang, Chunfu, Lim, Siew Lay, Kang, En-Tang, Chan, Daniel S. H., Zhu, Chunxiang

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 28 KB

english, 2009

24

High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration

Hyun-Yong Yu,, Shen Ren,, Woo Shik Jung,, Okyay, A.K., Miller, D.A.B., Saraswat, K.C.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 348 KB

english, 2009

25

On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure

Yi-Jung Liu,, Chih-Hung Yen,, Li-Yang Chen,, Tsung-Han Tsai,, Tsung-Yuan Tsai,, Wen-Chau Liu,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 180 KB

english, 2009

26

Errors in Projecting Gate Dielectric Reliability From Fowler–Nordheim Stress to Direct-Tunneling Operation

Nicollian, P.E.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 136 KB

english, 2009

27

Pentacene TFT With Reduced Threshold Voltage Using PMMA-co-MAA/Sol-Gel-Derived $\hbox{TiO}_{2}$ Composite Insulator

Jaehoon Park,, Park, B.J., Hyoung Jin Choi,, Youngmin Kim,, Jong Sun Choi,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 483 KB

english, 2009

28

Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET

Minseok Jo,, Man Chang,, Seonghyun Kim,, Seungjae Jung,, Ju-Bong Park,, Joonmyoung Lee,, Dong-Jun Seong,, Hyunsang Hwang,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 443 KB

english, 2009

29

Current-Density Dependence on Ag eFUSEs With TiN Underlayers

Indluru, A., Misra, E., Alford, T.L.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 137 KB

english, 2009

30

Source/Drain Formed by MEE Regrowth

Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Thibeault, B.J., Gossard, A.C., Rodwell, M.J.W., Byungha Shin,, Kim, E.J., McIntyre, P.C., Bo Yu,, Yu Yuan,, Wang, D., Yuan Taur,, Asbeck

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 185 KB

english, 2009

31

Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

Shyh-Chiang Shen,, Yi-Che Lee,, Hee-Jin Kim,, Yun Zhang,, Suk Choi,, Dupuis, R.D., Jae-Hyun Ryou,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 293 KB

english, 2009

32

Analytical Modeling of the Spectral Response of Heterojunction Phototransistors

Khan, H.A., Rezazadeh, A.A.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 365 KB

english, 2009

33

High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

Ghandi, R., Buono, B., Domeij, M., Malm, G., Zetterling, C.-M., Ostling, M.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 282 KB

english, 2009

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