A monolithically integrated Si interband tunneling diode (IBTD)/MOSFET memory for ultra low voltage operation below 0.5 V
H. Sorada, K. Morita, K. Morimoto, S. Yoshii, T. Uenoyama, K. OhnakaVolume:
28
Year:
2000
Language:
english
Pages:
7
DOI:
10.1006/spmi.2000.0930
File:
PDF, 183 KB
english, 2000