Volume 28; Issue 5-6

Superlattices and Microstructures

Volume 28; Issue 5-6

1

Editorial: Special issue on silicon nanoelectronics

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 14 KB

english, 2000

2

A monolithically integrated Si interband tunneling diode (IBTD)/MOSFET memory for ultra low voltage operation below 0.5 V

H. Sorada, K. Morita, K. Morimoto, S. Yoshii, T. Uenoyama, K. Ohnaka

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 183 KB

english, 2000

3

Investigation of charging/discharging phenomena in nano-crystal memories

B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, T. Baron

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 550 KB

english, 2000

4

Single-electron transistor analyticI–Vmodel for SPICE simulations

Xiaohui Wang, Wolfgang Porod

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 142 KB

english, 2000

5

MOSFET scaling into the 10 nm regime

Leland Chang, Chenming Hu

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 144 KB

english, 2000

6

Threshold voltage fluctuations induced by statistical ‘position’ and ‘number’ impurity fluctuations in bulk MOSFETs

Yuri Yasuda, Makoto Takamiya, Toshiro Hiramoto

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 146 KB

english, 2000

7

Material requirements and design considerations for Si/SiGe heterojunction CMOS

S. Badcock, A. O’Neill

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 135 KB

english, 2000

8

Quantum wires in strained silicon quantum wells on tilted substrates

M.J. Rack, T.J. Thornton, D.K. Ferry

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 1.05 MB

english, 2000

9

Development of epitaxial silicon lattice-matched insulators: silicon heterostructures for quantum confinement

Wiley P Kirk, Kevin Clark, Eduardo Maldonado, Nasir Basit, Robert T Bate, Gregory F Spencer

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 550 KB

english, 2000

10

Dynamics of tunneling into charge-tunable Si quantum dots

Y. Shi, X.L. Yuan, J. Wu, H.M. Bu, H.G. Yang, P. Han, Y.D. Zheng, T. Hiramoto

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 321 KB

english, 2000

11

Process and device characteristics of self-assembled metal nano-crystal EEPROM

Zengtao Liu, Myongseob Kim, Venkat Narayanan, Edwin C. Kan

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 3.72 MB

english, 2000

12

A direct tunneling memory using ultra-thin oxide and deca-nano floating gate structure

Tatsuya Usuki, Naoto Horiguchi, Kenichi Goto, Takuji Tanaka, Toshiro Futatsugi, Toshihiro Sugii, Naoki Yokoyama

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 182 KB

english, 2000

13

Influence of off-set energy on the electrical characteristics of Si resonant tunneling MOST (SRTMOST)

Naoto Matsuo, Yasunori Kitagawa, Yoshinori Takami, Junya Yamauchi, Hiroki Hamada, Tadaki Miyoshi

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 201 KB

english, 2000

14

Formation of unintentional dots in small Si nanostructures

L.P. Rokhinson, L.J. Guo, S.Y. Chou, D.C. Tsui

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 411 KB

english, 2000

15

Effective potentials and the onset of quantization in ultrasmall MOSFETs

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 81 KB

english, 2000

16

Semi-empirical and practical model for low-electric field direct tunneling current estimation in nanometer-thick SiO2films

Hiroshi Nakatsuji, Akira Shimizu, Yasuhisa Omura

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 130 KB

english, 2000

17

Towards quantum cellular automata operation in silicon: transport properties of silicon multiple dot structures

C. Single, R. Augke, F.E. Prins, D.A. Wharam, D.P. Kern

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 485 KB

english, 2000

18

Ultimate sub-25 nm gate length NMOSFETs transport at 293 and 77 K

G Bertrand, S Deleonibus, D Souil, C Caillat, G Guegan, S Tedesco, M Heitzmann, P Mur, F Balestra

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 618 KB

english, 2000

19

A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain

Jakub Kedzierski, Peiqi Xuan, Vivek Subramanian, Jeffrey Bokor, Tsu-Jae King, Chenming Hu, Erik Anderson

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 635 KB

english, 2000

20

Properties of Si nanowire devices fabricated by using an inorganic EB resist process

Toshiyuki Tsutsumi, Eiichi Suzuki, Kenichi Ishii, Hiroshi Hiroshima, Mitsuyuki Yamanaka, Isao Sakata, Sukti Hazra, Kazutaka Tomizawa

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 1.49 MB

english, 2000

21

3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects

S.N. Miličić, R. Akis, D. Vasileska, A. Gunther, S.M. Goodnick

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 565 KB

english, 2000

22

Nanolithography by electron beam resist-trimming technique

Tatsuro Maeda, Kenichi Ishii, Hiroshi Hiroshima

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 1.50 MB

english, 2000

23

Metal-oxide-semiconductor field effect transistor using ‘oxidizedμc-Si/ultrathin oxide’ gate structure

Seung Jae Baik, Jae Hyung Choi, Jeong Yong Lee, Koeng Su Lim

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 690 KB

english, 2000

24

Analysis of the design space available for high-kgate dielectrics in nanoscale MOSFETs

David J Frank, Hon-Sum P Wong

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 593 KB

english, 2000

25

Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques † 

C. Busseret, A. Souifi, T. Baron, G. Guillot, F. Martin, M.N. Semeria, J. Gautier

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 198 KB

english, 2000

26

Subthreshold and scaling of PtSi Schottky barrier MOSFETs

L.E Calvet, H Luebben, M.A Reed, C Wang, J.P Snyder, J.R Tucker

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 172 KB

english, 2000

27

Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study

A. Asenov, S. Kaya, J.H. Davies, S. Saini

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 4.09 MB

english, 2000

28

Influence of defects on elastic gate tunneling currents through ultrathin SiO2gate oxides: predictions from microscopic models

M Städele, B Fischer, B.R Tuttle, K Hess

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 179 KB

english, 2000

29

Extraordinarily high drive currents in asymmetrical double-gate MOSFETs

Jerry G. Fossum, Zhibin Ren, Keunwoo Kim, Mark Lundstrom

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 271 KB

english, 2000

30

Index to Volumes 27 & 28

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 106 KB

english, 2000

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