Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN...

IEEE Electron Device Letters 2012 Vol. 33; Iss. 6

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High

Denninghoff, D.J., Dasgupta, S., Jing Lu, Keller, S., Mishra, U.K.
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Volume:
33
Year:
2012
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2191134
File:
PDF, 472 KB
english, 2012
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