Volume 33; Issue 6

IEEE Electron Device Letters

Volume 33; Issue 6

1

p-Type Electrical Transport of Chemically Doped Epitaxial Graphene Nanoribbons

Bryan, S.E., Brenner, K., Yinxiao Yang, Murali, R., Meindl, J.D.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 286 KB

english, 2012

2

Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages

Chuan Lee, Wooyeol Choi, Ruonan Han, Shichijo, H., Kenneth, K.O.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 483 KB

english, 2012

3

A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices

Muralidhar, R., Jin Cai, Lauer, I., Chan, K., Kulkarni, P., Young-Hee Kim, Zhibin Ren, Dae-Gyu Park, Oldiges, P., Shahidi, G.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 453 KB

english, 2012

4

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High

Denninghoff, D.J., Dasgupta, S., Jing Lu, Keller, S., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 472 KB

english, 2012

5

Hole Mobilities of $\hbox{Si/Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well Transistor on SOI and Strained SOI

Yu, W., Zhang, B., Zhao, Q. T., Buca, D., Hartmann, J.-M., Luptak, R., Mussler, G., Fox, A., Bourdelle, K. K., Wang, X., Mantl, S.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 462 KB

english, 2012

6

Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

Nidhi,, Dasgupta, Sansaptak, Lu, Jing, Speck, James S., Mishra, Umesh K.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 393 KB

english, 2012

7

The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors

Park, Jae Chul, Kim, Sang Wook, Kim, Chang Jung, Lee, Ho-Nyeon

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 240 KB

english, 2012

8

On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

Huang, Chien-Chang, Chen, Huey-Ing, Chen, Tai-You, Hsu, Chi-Shiang, Chen, Chun-Chia, Chou, Po-Cheng, Liou, Jian-Kai, Liu, Wen-Chau

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 188 KB

english, 2012

9

A Fully Passive Wireless Backscattering Neurorecording Microsystem Embedded in Dispersive Human-Head Phantom Medium

Schwerdt, Helen N., Miranda, FÃ©lix A., Chae, Junseok

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 487 KB

english, 2012

10

Diffusion of Water Molecules in Amorphous Silica

Kostinski, Sarah, Pandey, Ravindra, Gowtham, S., Pernisz, Udo, Kostinski, Alexander

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 320 KB

english, 2012

11

Voltage Ramp Stress for Hot-Carrier Screening of Scaled CMOS Devices

Kerber, A., McMahon, W., Cartier, E.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 419 KB

english, 2012

12

Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs

G. Leung, C. O. Chui

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 441 KB

english, 2012

13

A New Recess Method for SA-STI nand Flash Memory

Z. Wang, Y. Lee, R. Yang, Y. Li, H. Chen, C. J. Lin

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 417 KB

english, 2012

14

Unipolar Resistive Switching Characteristics of a $ \hbox{ZrO}_{2}$ Memory Device With Oxygen Ion Conductor Buffer Layer

D. Lee, T. Tseng

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 300 KB

english, 2012

15

Operating TSV in Stable Accumulation Capacitance Region by Utilizing $\hbox{Al}_{2}\hbox{O}_{3}$-Induced Negative Fixed Charge

L. Zhang, L. Peng, H. Y. Li, G. Q. Lo, D. L. Kwong, C. S. Tan

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 165 KB

english, 2012

16

Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors

H. Nguyen Van, J. C. Moreno, A. N. Baranov, R. Teissier, M. Zaknoune

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 292 KB

english, 2012

17

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 277 KB

english, 2012

18

Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

Lan, Linfeng, Zhao, Mingjie, Xiong, Nana, Xiao, Peng, Shi, Wen, Xu, Miao, Peng, Junbiao

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 343 KB

english, 2012

19

A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets

Lee, Ung Gi, Mativenga, Mallory, Kang, Dong Han, Jang, Jin

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 394 KB

english, 2012

20

Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array

Wang, Kuan-Ti, Hsueh, Fang-Chang, Lu, Yu-Lun, Chiang, Tsung-Yu, Wu, Yi-Hong, Liao, Chia-Chun, Yen, Li-Chen, Chao, Tien-Sheng

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 541 KB

english, 2012

21

Coexistence of Memristive Behaviors and Negative Capacitance Effects in Single-Crystal $\hbox{TiO}_{2}$ Thin-Film-Based Devices

Hu, P., Lu, J. Q., Wu, S. X., Lv, Q. B., Li, S. W.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 316 KB

english, 2012

22

Extraction of the Channel Mobility in InGaZnO TFTs Using Multifrequency Capacitance–Voltage Method

Cho, In-Tak, Park, Ick-Joon, Kong, Dongsik, Kim, Dae Hwan, Lee, Jong-Ho, Song, Sang-Hun, Kwon, Hyuck-In

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 322 KB

english, 2012

23

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

Zhou, Guangle, Lu, Yeqing, Li, Rui, Zhang, Qin, Liu, Qingmin, Vasen, Tim, Zhu, Haijun, Kuo, Jenn-Ming, Kosel, Tom, Wistey, Mark, Fay, Patrick, Seabaugh, Alan, Xing, Huili

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 641 KB

english, 2012

24

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Miao, Meng, Dong, Shurong, Wu, Jian, Zeng, Jie, Liou, Juin J., Ma, Fei, Li, Hongwei, Han, Yan

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 282 KB

english, 2012

25

Impact of Individual Charged Gate-Oxide Defects on the Entire $I_{D}$–$V_{G}$ Characteristic of Nanoscaled FETs

Franco, Jacopo, Kaczer, Ben, Toledano-Luque, María, Bukhori, Muhammad Faiz, Roussel, Philippe J., Grasser, Tibor, Asenov, Asen, Groeseneken, Guido

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 461 KB

english, 2012

26

Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

Park, Jae Chul, Lee, Ho-Nyeon

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 217 KB

english, 2012

27

Nanocrystalline Si-Based Resistive Humidity Sensors Prepared via HWCVD at Various Filament Temperatures

Hsueh, T. J., Chen, Y. H., Weng, W. Y., Tsai, T. Y., Hsueh, H. T., Hus, C. L., Dai, B. T., Shieh, J. M.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 416 KB

english, 2012

28

Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc–Tin–Silicon–Oxide Barrier Layer

Sundholm, E. S., Presley, R. E., Hoshino, K., Knutson, C. C., Hoffman, R. L., Mourey, D. A., Keszler, D. A., Wager, J. F.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 94 KB

english, 2012

29

Monolithic HBV-Based 282-GHz Tripler With 31-mW Output Power

Vukusic, J., Bryllert, T., Olsen, Øistein, Hanning, J., Stake, J.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 445 KB

english, 2012

30

Effect of Nitrogen Passivation on the Performance of MIM Capacitors With a Crystalline- $\hbox{TiO}_{2}/\hbox{SiO}_{2}$ Stacked Insulator

Wu, Jia-Rong, Wu, Yung-Hsien, Lin, Chia-Chun, Ou, Wei-Yuan, Wu, Min-Lin, Chen, Lun-Lun

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 314 KB

english, 2012

31

High-Performance InAs Nanowire MOSFETs

Dey, Anil W., Thelander, Claes, Lind, Erik, Dick, Kimberly A., Borg, B. Mattias, Borgstrom, Magnus, Nilsson, Peter, Wernersson, Lars-Erik

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 326 KB

english, 2012

32

Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

Ha, Tae-Jun, Sonar, Prashant, Dodabalapur, Ananth

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 330 KB

english, 2012

33

Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{SiO}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Dou, Wei, Jiang, Jie, Sun, Jia, Zhou, Bin, Wan, Qing

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 407 KB

english, 2012

34

Floating-Body Kink-Effect-Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT

Liu, Tony C., Kuo, James B., Zhang, Shengdong

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 547 KB

english, 2012

35

Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires

Tsai, Tsung-Ying, Hsu, Cheng-Liang, Chang, Shoou-Jinn, Chen, Szu-I., Hsueh, Han-Ting, Hsueh, Ting-Jen

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 453 KB

english, 2012

36

Fabrication of Sensitivity Tunable Flexible Force Sensor via Spray Coating of Graphite Ink

Akter, Tahmina, Joseph, Justin, Kim, Woo Soo

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 190 KB

english, 2012

37

Interfacial Elastic Dipoles: A New EOT Shifting Mechanism in HKMG Devices

Liang, Qingqing, Xu, Qiuxia, Zhu, Huilong, Zhong, Huicai, Li, Junfeng, Zhao, Chao, Chen, Dapeng, Ye, Tianchun

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 439 KB

english, 2012

38

Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of $\langle \hbox{110}\rangle$ Uniaxial-Tensile-Strained (001) nMOSFETs

Chen, Ming-Jer, Lee, Wei-Han

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 402 KB

english, 2012

39

Extraction Method of Trap Densities in TFTs Combining $C$–$V$ and F-E Methods

Kimura, Mutsumi

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 211 KB

english, 2012

40

Characteristics of a Smiling Polysilicon Thin-Film Transistor

Lin, Jyi-Tsong, Chang, Tzu-Feng, Eng, Yi-Chuen, Lin, Po-Hsieh, Chen, Cheng-Hsin

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 561 KB

english, 2012

41

Comparison of Electrical Properties and Bias Stability of Double-Gate a-HIZO TFTs According to TFT Structure

Lee, Young Wook, Kim, Sun-Jae, Lee, Soo-Yeon, Lee, Woo-Geun, Yoon, Kap-Soo, Lee, Hyun-Jung, Oh, Ji-Soo, Park, Jae-Woo, Han, Min-Koo

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 490 KB

english, 2012

42

A Gate-Dielectric-Last Process via Photosolidification of Liquid Resin

Han, Jin-Woo, Choi, Yang-Kyu, Meyyappan, M.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 303 KB

english, 2012

43

Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays

Wei, T. B., Wu, K., Chen, Y., Yu, J., Yan, Q., Zhang, Y. Y., Duan, R., Wang, J., Zeng, Y., Li, J. M.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 429 KB

english, 2012

44

Electroplated Ni-CNT Nanocomposite for Micromechanical Resonator Applications

Lee, Yi-Chia, Li, Ming-Huang, Cheng, Y. T., Hsu, Wensyang, Li, Sheng-Shian

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 338 KB

english, 2012

45

The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium

Roy, Arunanshu M., Lin, Jason, Saraswat, Krishna C.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 470 KB

english, 2012

46

Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts

Tong, Yi, Liu, Bin, Lim, Phyllis Shi Ya, Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 509 KB

english, 2012

47

In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed $\hbox{TiO}_{x}$

Jung, Seungjae, Kong, Jaemin, Kim, Tae-Wook, Song, Sunghoon, Lee, Kwanghee, Lee, Takhee, Hwang, Hyunsang, Jeon, Sanghun

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 354 KB

english, 2012

48

Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories

Wu, Qingqing, Chen, Jing, Lu, Zhichao, Zhou, Zhenming, Luo, Jiexin, Chai, Zhan, Yu, Tao, Qiu, Chao, Li, Le, Pang, Albert, Wang, Xi, Fossum, Jerry G.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 328 KB

english, 2012

49

Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

Furuta, M., Kawaharamura, T., Depang Wang,, Toda, T., Hirao, T.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 372 KB

english, 2012

50

High-Efficiency n-Type Si Solar Cells With Novel Inkjet-Printed Boron Emitters

Ryu, Kyungsun, Upadhyaya, Ajay, Ok, Young-Woo, Kang, Moon Hee, Upadhyaya, Vijaykumar, Metin, Lea, Xu, Helen, Bhanap, Anil, Rohatgi, Ajeet

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 283 KB

english, 2012

51

11.72-$\hbox{cm}^{2}$ Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 $\hbox{MA}^{2}\cdot\hbox{s}$

Snook, M., Hearne, H., McNutt, T., Veliadis, V., El-Hinnawy, N., Nechay, B., Woodruff, S., Stahlbush, R. E., Howell, R. S., Giorgi, D., White, J., Davis, S.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 310 KB

english, 2012

52

Effects of a Load Resistor on Conducting Filament Characteristics and Unipolar Resistive Switching Behaviors in a Pt/NiO/Pt Structure

Hwang, Inrok, Lee, Myung-Jae, Bae, Jieun, Hong, Sahwan, Kim, Jin-Soo, Choi, Jinsik, Deng, Xiao Long, Ahn, Seung-Eon, Kang, Sung-Oong, Park, Bae Ho

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 320 KB

english, 2012

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@1delivery.pm

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски