Scalability of strained-Si nMOSFETs down to 25 nm gate...

IEEE Electron Device Letters 2003 Vol. 24; Iss. 5

Scalability of strained-Si nMOSFETs down to 25 nm gate length

Jung-Suk Goo,, Qi Xiang,, Takamura, Y., Haihong Wang,, Pan, J., Arasnia, F., Paton, E.N., Besser, P., Sidorov, M.V., Adem, E., Lochtefeld, A., Braithwaite, G., Currie, M.T., Hammond, R., Bulsara, M
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Volume:
24
Year:
2003
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2003.812563
File:
PDF, 298 KB
english, 2003
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