Volume 24; Issue 5

IEEE Electron Device Letters

Volume 24; Issue 5

1

Scalability of strained-Si nMOSFETs down to 25 nm gate length

Jung-Suk Goo,, Qi Xiang,, Takamura, Y., Haihong Wang,, Pan, J., Arasnia, F., Paton, E.N., Besser, P., Sidorov, M.V., Adem, E., Lochtefeld, A., Braithwaite, G., Currie, M.T., Hammond, R., Bulsara, M

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 298 KB

english, 2003

2

Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics

Min Yang,, Gusev, E.P., Meikei Ieong,, Gluschenkov, O., Boyd, D.C., Chan, K.K., Kozlowski, P.M., D'Emic, C.P., Sicina, R.M., Jamison, P.C., Chou, A.I.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 266 KB

english, 2003

3

10-W/mm AlGaN-GaN HFET with a field modulating plate

Ando, Y., Okamoto, Y., Miyamoto, H., Nakayama, T., Inoue, T., Kuzuhara, M.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 510 KB

english, 2003

4

A high efficient 820 nm MOS Ge quantum dot photodetector

Hsu, B.-C., Chang, S.T., Chen, T.-C., Kuo, P.-S., Chen, P.S., Pei, Z., Liu, C.W.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 234 KB

english, 2003

5

An AlGaAs-GaAs-based RCE MSM photodetector with delta modulation doping

Xiying Chen,, Nabet, B., Cola, A., Quaranta, F., Currie, M.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 223 KB

english, 2003

6

Fully silicided NiSi gate on La2O3 MOSFETs

C. Lin, M. Ma, A. Chin, Y. Yeo, Chunxiang Zhu, M. Li, Dim-lee Kwong

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 247 KB

english, 2003

7

The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide

W. Lin, K. Pey, Z. Dong, S. Chooi, C. Ang, J. Zheng

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 186 KB

english, 2003

8

Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric, and elevated source/drain extensions

A. Vandooren, A. Barr, L. Mathew, T. White, S. Egley, D. Pham, M. Zavala, S. Samavedam, J. Schaeffer, J. Conner, B. Nguyen, B. White, M. Orlowski, J. Mogab

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 276 KB

english, 2003

9

A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage

Zengtao Liu, Chungho Lee, V. Narayanan, G. Pei, E. Kan

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 371 KB

english, 2003

10

The origination and optimization of Si/SiO2 interface roughness and its effect on CMOS performance

Yuanning Chen,, Myricks, R., Decker, M., Liu, J., Higashi, G.S.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 1.55 MB

english, 2003

11

Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

Pan, J., Woo, C., Chih-Yuh Yang,, Bhandary, U., Guggilla, S., Krishna, N., Hua Chung,, Hui, A., Bin Yu,, Qi Xiang,, Ming-Ren Lin,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 421 KB

english, 2003

12

Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz

Hafez, W., Jie-Wei Lai,, Feng, M.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 253 KB

english, 2003

13

Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide

Tsu-Hsiu Perng,, Chao-Hsin Chien,, Ching-Wei Chen,, Horng-Chih Lin,, Chun-Yen Chang,, Tiao-Yuan Huang,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 212 KB

english, 2003

14

A high current gain 4H-SiC NPN power bipolar junction transistor

Jianhui Zhang,, Luo, Y., Alexandrov, P., Fursin, L., Zhao, J.H.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 371 KB

english, 2003

15

An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Chang Seo Park,, Byung Jin Cho,, Dim-Lee Kwong,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 221 KB

english, 2003

16

Silicon-nitride as a tunnel dielectric for improved SONOS-type flash memory

Min She,, Takeuchi, H., Tsu-Jae King,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 246 KB

english, 2003

17

On the electrical monitor for device degradation in the CHISEL stress regime

Driussi, F., Esseni, D., Selmi, L.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 294 KB

english, 2003

18

Effect of gate impurity concentration on inversion-layer mobility in MOSFETs with ultrathin gate oxide layer

Koga, J., Ishihara, T., Takagi, S.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 247 KB

english, 2003

19

A study of nitrogen peak location in gate oxides grown on nitrogen implanted substrates and its impact on boron penetration

Mirabedini, M.R., Kamath, A., Yeh, W.C.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 268 KB

english, 2003

20

Reduction of carrier depletion in p/sup +/ polysilicon gates using laser thermal processing

Chong, Y.F., Gossmann, H.-J.L., Thompson, M.O., Pey, K.L., Wee, A.T.S., Talwar, S., Chan, L.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 227 KB

english, 2003

21

High-density MIM capacitors using AlTaOx dielectrics

Yang, M.Y., Huang, C.H., Chin, A., Chunxiang Zhu,, Li, M.F., Dim-Lee Kwong,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 285 KB

english, 2003

22

Impact of poly-gate depletion on MOS RF linearity

Chang-Hoon Choi,, Zhiping Yu,, Dutton, R.W.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 253 KB

english, 2003

23

3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay

Jagannathan, B., Meghelli, M., Chan, K., Jae-Sung Rieh,, Schonenberg, K., Ahlgren, D., Subbanna, S., Freeman, G.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 312 KB

english, 2003

24

Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers

Miura, M., Nakamura, S., Suda, J., Kimoto, T., Matsunami, H.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 261 KB

english, 2003

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