Simulation of the reverse I – V characteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs
Boháček, P, Dubecký, F, Sekáčová, MVolume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/7/015
Date:
July, 2007
File:
PDF, 656 KB
english, 2007