Characterization of Single-Event Burnout in Power MOSFET...

IEEE Transactions on Nuclear Science 2006 / 12 Vol. 53; Iss. 6

Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing

Miller, F., Luu, A., Prud'homme, F., Poirot, P., Gaillard, R., Buard, N., Carrire, T.
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Volume:
53
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2006.885376
Date:
December, 2006
File:
PDF, 1.57 MB
english, 2006
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