A Gate Overdrive Protection Technique for Improved...

IEEE Electron Device Letters 2013 / 01 Vol. 34; Iss. 1

A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

Kwan, Alex Man Ho, Chen, Kevin J.
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2224632
Date:
January, 2013
File:
PDF, 556 KB
english, 2013
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