Impact of Highly Compressive Interlayer-Dielectric-$...

IEEE Electron Device Letters 2010 / 12 Vol. 31; Iss. 12

Impact of Highly Compressive Interlayer-Dielectric-$ \hbox{SiN}_{x}$ Stressing Layer on $\hbox{1}/f$ Noise and Reliability of SiGe-Channel pMOSFETs

Chen, Yu-Ting, Chen, Kun-Ming, Liao, Wen-Shiang, Huang, Guo-Wei, Huang, Fon-Shan
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2073438
Date:
December, 2010
File:
PDF, 462 KB
english, 2010
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