Volume 31; Issue 12

IEEE Electron Device Letters

Volume 31; Issue 12

1

Stability Analysis in Graphene Nanoribbon Interconnects

Nasiri, S.H., Moravvej-Farshi, M.K., Faez, R.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 340 KB

english, 2010

2

High-Voltage Generation With Stacked Photodiodes in Standard CMOS Process

Law, M. K., Bermak, A.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 284 KB

english, 2010

3

Impact of Highly Compressive Interlayer-Dielectric-$ \hbox{SiN}_{x}$ Stressing Layer on $\hbox{1}/f$ Noise and Reliability of SiGe-Channel pMOSFETs

Chen, Yu-Ting, Chen, Kun-Ming, Liao, Wen-Shiang, Huang, Guo-Wei, Huang, Fon-Shan

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 462 KB

english, 2010

4

Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays

Zhang, Dong-Yan, Zheng, Xin-He, Tang, Long-Juan, Dong, Jian-Rong, Wang, Hui, Yang, Hui

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 265 KB

english, 2010

5

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

Manoi, Athikom, Pomeroy, James W., Killat, Nicole, Kuball, Martin

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 247 KB

english, 2010

6

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

Yu, Shimeng, Wong, H.-S. Philip

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 202 KB

english, 2010

7

N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications

Nidhi,, Dasgupta, Sansaptak, Pei, Yi, Swenson, Brian L., Keller, Stacia, Speck, James S., Mishra, Umesh K.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 380 KB

english, 2010

8

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Wang, Ronghua, Saunier, Paul, Xing, Xiu, Lian, Chuanxin, Gao, Xiang, Guo, Shiping, Snider, Gregory, Fay, Patrick, Jena, Debdeep, Xing, Huili

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 319 KB

english, 2010

9

A Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structure

Chang, Tzu-Yueh, Chang, Chun-Lung, Lee, Hsin-Yu, Lee, Po-Tsung

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 303 KB

english, 2010

10

Blue Light-Emitting Diodes With an Embedded Native Gallium Oxide Pattern Structure

Lin, Chia-Feng, Chen, Kuei-Ting, Huang, Kun-Pin

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 378 KB

english, 2010

11

Wang, Yan, Lv, Hangbing, Wang, Wei, Liu, Qi, Long, Shibing, Wang, Qin, Huo, Zongliang, Zhang, Sen, Li, Yingtao, Zuo, Qingyun

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 294 KB

english, 2010

12

$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current

Y. Wu, B. Lee, H. P. Wong

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 368 KB

english, 2010

13

n-Type Nanocrystalline-$\hbox{FeSi}_{2}$ /p-Type Si Heterojunction Photodiodes Prepared at Room Temperature

Shaban, Mahmoud, Kawai, Kenji, Promros, Nathaporn, Yoshitake, Tsuyoshi

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 384 KB

english, 2010

14

Chen, Te-Chih, Chang, Ting-Chang, Chen, Shih-Ching, Hsieh, Tien-Yu, Jian, Fu-Yen, Lin, Chia-Sheng, Li, Hung-Wei, Lee, Ming-Hsien, Chen, Jim-Shone, Shih, Ching-Chieh

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 420 KB

english, 2010

15

Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

S. Wang, P. Chiang, C. Chang, S. Chen, J. Chyi

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 473 KB

english, 2010

16

Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer

L. Chen, Y. Wu, T. Lin, J. Huang, M. Hung, J. Chen, C. Chang

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 468 KB

english, 2010

17

Low-Temperature-Deposited $\hbox{SiO}_{2}$ Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors

C. Fan, P. Chiu, C. Lin

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 227 KB

english, 2010

18

Journal:

IEEE Electron Device Letters

Language:

english

File:

PDF, 239 KB

english,

19

Low-Operating-Voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose Radiation

H. N. Raval, V. R. Rao

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 298 KB

english, 2010

20

AlGaN/GaN Microwave Switch With Hybrid Slow and Fast Gate Design

Sattu, A., Yang, J., Shur, M., Gaska, R., Simin, G.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 309 KB

english, 2010

21

SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz

Muller, Alexandru, Neculoiu, Dan, Konstantinidis, George, Deligeorgis, George, Dinescu, Adrian, Stavrinidis, Antonis, Cismaru, Alina, Dragoman, Mircea, Stefanescu, Alexandra

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 462 KB

english, 2010

22

Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance

Kim, Wandong, Lee, Jung Hoon, Yun, Jang-Gn, Cho, Seongjae, Li, Dong-Hua, Kim, Yoon, Kim, Doo-Hyun, Lee, Gil Sung, Park, Se-Hwan, Shim, Won Bo, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 528 KB

english, 2010

23

Three-Dimensional Chip Stack With Integrated Decoupling Capacitors and Thru-Si Via Interconnects

Dang, Bing, Shapiro, Michael, Andry, Paul, Tsang, Cornelia, Sprogis, Edmund, Wright, Steven, Interrante, Mario, Griffith, Jonathan, Truong, Van, Guerin, Luc, Liptak, Roger, Berger, Daniel, Knickerbock

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 355 KB

english, 2010

24

An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

Chen, Yu-Sheng, Lee, Heng-Yuan, Chen, Pang-Shiu, Wu, Tai-Yuan, Wang, Ching-Chiun, Tzeng, Pei-Jer, Chen, Frederick, Tsai, Ming-Jinn, Lien, Chenhsin

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 375 KB

english, 2010

25

Effect of Mechanical and Electromechanical Stress on a-ZIO TFTs

Dey, Aritra, Indluru, Anil, Venugopal, Sameer M., Allee, David R., Alford, Terry L.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 272 KB

english, 2010

26

$\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate Oxide

Zhao, Han, Chen, Y., Wang, Y., Zhou, F., Xue, F., Lee, J.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 314 KB

english, 2010

27

Solution-Processed ZTO TFTs With Recessed Gate and Low Operating Voltage

Lee, Chen-Guan, Dutta, Soumya, Dodabalapur, Ananth

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 196 KB

english, 2010

28

High-Quality $\hbox{Al}_{2}\hbox{O}_{3}$ for Low-Voltage High-Speed High-Temperature (Up to 250 $^{\circ}\hbox{C}$) Nonvolatile Memory Technology

Cui, Sharon, Peng, Cheng-Yi, Zhang, Wenqi, Sun, Xiao, Yang, Jie, Liu, Zuoguang, Kornblum, Lior, Eizenberg, Moshe, Ma, T. P.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 621 KB

english, 2010

29

Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process

Nah, Junghyo, Liu, En-Shao, Varahramyan, Kamran M., Dillen, Dave, McCoy, Steve, Chan, Jason, Tutuc, Emanuel

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 292 KB

english, 2010

30

2010 Index IEEE Electron Device Letters Vol. 31

Sayidmarie, K. H., Saghurchy, Mohammed N.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 820 KB

english, 2010

31

18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation

Feng, Z. H., Zhou, R., Xie, S. Y., Yin, J. Y., Fang, J. X., Liu, B., Zhou, W., Chen, Kevin J., Cai, S. J.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 182 KB

english, 2010

32

Correction to “205-GHz (Al,In)N/GaN HEMTs” [Sep 10 957-959

Biklien Hoang,, Ganguly, G.

Journal:

IEEE Electron Device Letters

Year:

2010

File:

PDF, 24 KB

2010

33

BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device

Aoulaiche, Marc, Collaert, Nadine, Degraeve, Robin, Lu, Zhichao, De Wachter, Bart, Groeseneken, Guido, Jurczak, Malgorzata, Altimime, Laith

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 115 KB

english, 2010

34

A Novel Charge-Imbalance Termination for Trench Superjunction VDMOS

Qian, Qinsong, Sun, Weifeng, Zhu, Jing, Liu, Siyang

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 348 KB

english, 2010

35

Low-Frequency Noise in Integrated N-WELL Resistors

Srinivasan, P., Xiong, W., Zhao, S.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 495 KB

english, 2010

36

Full-Swing and High-Gain Pentacene Logic Circuits on Plastic Substrate

Jeon, Jin, Murmann, Boris, Bao, Zhenan

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 319 KB

english, 2010

37

Application of Discharge Plasma as Dynamic Switch in Microstrip Line

Ouyang, Jiting, Cao, Jing, Li, Shang, Peng, Zulin, Li, Weiming, Ren, Wu

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 210 KB

english, 2010

38

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

Ji, Kwang Hwan, Kim, Ji-In, Mo, Yeon-Gon, Jeong, Jong Han, Yang, Shinhyuk, Hwang, Chi-Sun, Park, Sang-Hee Ko, Ryu, Myung-Kwan, Lee, Sang-Yoon, Jeong, Jae Kyeong

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 335 KB

english, 2010

39

Experimental and Theoretical Analyses of the Electrical SOA of Rugged p-Channel LDMOS

Podgaynaya, Alevtina, Rudolf, Ralf, Pogany, Dionyz, Gornik, Erich, Stecher, Matthias

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 452 KB

english, 2010

40

Turn-Around Effect of $V_{\rm th}$ Shift During the Positive Bias Temperature Instability of the n-Type Transistor With $\hbox{HfO}_{x}\hbox{N}_{y}$ Gate Dielectrics

Jung, Hyung-Suk, Rha, Sang-Ho, Kim, Hyo Kyeom, Kim, Jeong Hwan, Won, Seok-Jun, Lee, Joohwi, Lee, Sang Young, Hwang, Cheol Seong, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 321 KB

english, 2010

41

Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation

Seo, Soon-Cheon, Yang, Chih-Chao, Wang, Miaomiao, Monsieur, Frederic, Adam, Lahir, Johnson, Jeffrey B., Horak, Dave, Fan, Susan, Cheng, Kangguo, Stathis, James, Doris, Bruce

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 606 KB

english, 2010

42

Characteristics of the Fluorinated High-$k$ Inter-Poly Dielectrics

Hsieh, Chih-Ren, Chen, Yung-Yu, Lu, Kwung-Wen, Lin, Gray, Lou, Jen-Chung

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 179 KB

english, 2010

43

Strained Silicon Nanowire p-Channel FETs With Diamond-Like Carbon Liner Stressor

Liu, Bin, Wong, Hoong-Shing, Yang, Mingchu, Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 377 KB

english, 2010