Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$...

IEEE Electron Device Letters 2012 / 07 Vol. 33; Iss. 7

Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness

Hashemi, O., Chern, W., Lee, H., Teherani, J. T., Zhu, Y., Gonsalvez, J., Shahidi, G. G., Hoyt, J. L.
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2195631
Date:
July, 2012
File:
PDF, 357 KB
english, 2012
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