Island formation during growth of Ge on Si(100): A study...

Applied Physics Letters 1995 Vol. 66; Iss. 22

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Sunamura, H., Usami, N., Shiraki, Y., Fukatsu, S.
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Volume:
66
Year:
1995
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.114265
File:
PDF, 413 KB
english, 1995
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