Volume 66; Issue 22

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Applied Physics Letters
Volume 66; Issue 22

Applied Physics Letters

Volume 66; Issue 22

1

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Sunamura, H., Usami, N., Shiraki, Y., Fukatsu, S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 413 KB

english, 1995

2

Electrical impedance measurements of polymer light-emitting diodes

Campbell, I. H., Smith, D. L., Ferraris, J. P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 287 KB

english, 1995

3

Bowing parameters for zinc-blende Al1âxGaxN and Ga1âxInxN

Wright, A. F., Nelson, J. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 337 KB

english, 1995

4

Traverse electric mode characteristics in a cylinder waveguide with a periodic dielectric cladding

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 380 KB

english, 1995

5

Direct current conduction properties of sputtered Pt/(Ba0.7Sr0.3)TiO3/Pt thin films capacitors

Hsu, W. Y., Luttmer, J. D., Tsu, R., Summerfelt, S., Bedekar, M., Tokumoto, T., Nulman, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 381 KB

english, 1995

6

High quantum efficiency for a porous silicon light emitting diode under pulsed operation

Linnros, Jan, Lalic, Nenad

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 297 KB

english, 1995

7

Room temperature persistent spectra hole burning in Sm2+-doped silicate glasses prepared by the sol-gel process

Nogami, Masayuki, Abe, Yoshihiro, Hirao, Kazuyuki, Cho, D. H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 286 KB

english, 1995

8

Self-aligned hybrid integration of semiconductor lasers with micromachined micro-optics for optoelectronic packaging

Lin, L. Y., Lee, S. S., Pister, K. S. J., Wu, M. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 397 KB

english, 1995

9

Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi-insulating GaAs

Fang, Z-Q., Look, D. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 320 KB

english, 1995

10

Resonant modes and laser spectrum of microdisk lasers

Frateschi, N. C., Levi, A. F. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 250 KB

english, 1995

11

High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

Kung, P., Saxler, A., Zhang, X., Walker, D., Wang, T. C., Ferguson, I., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 309 KB

english, 1995

12

Giant room-temperature magnetoresistance in the FeRh alloy

Algarabel, P. A., Ibarra, M. R., Marquina, C., del Moral, A., Galibert, J., Iqbal, M., Askenazy, S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 302 KB

english, 1995

13

Low-temperature anneal of the divacancy in p-type silicon: A transformation from V2 to VxOy complexes?

Trauwaert, M.-A., Vanhellemont, J., Maes, H. E., Van Bavel, A.-M., Langouche, G., Clauws, P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 245 KB

english, 1995

14

Nitrogen and fluorine ion implantation in InxGa1−xN

Zolper, J. C., Pearton, S. J., Abernathy, C. R., Vartuli, C. B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 316 KB

english, 1995

15

Biased-voltage controlled thinning for bonded silicon-on-insulator wafers

Huang, Qing-An, Chen, Jun-Ning, Fu, Xing-Hua, Zhang, Hui-Zhen, Tong, Qin-Yi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 303 KB

english, 1995

16

Novel power switch using oblique incidence to a nonlinear slab

Liu, Hwei-Yuan, Wang, Way-Seen

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 344 KB

english, 1995

17

Many-body Coulomb effects in room-temperature II–VI quantum well semiconductor lasers

Chow, W. W., Koch, S. W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 339 KB

english, 1995

18

Postfabrication native-oxide improvement of the reliability of visible-spectrum AlGaAs–In(AlGa)P p-n heterostructure diodes

Richard, T. A., Holonyak, N., Kish, F. A., Keever, M. R., Lei, C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 543 KB

english, 1995

19

Optically pumped CdZnSe/ZnSe blue-green vertical cavity surface emitting lasers

Floyd, P. D., Merz, J. L., Luo, H., Furdyna, J. K., Yokogawa, Toshiya, Yamada, Yoichi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 339 KB

english, 1995

20

Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As asymmetric double quantum wells

Krol, M. F., Leavitt, R. P., Pham, J. T., McGinnis, B. P., Peyghambarian, N.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 320 KB

english, 1995

21

Evidence of M-type oxygen octahedral rotations in the high-temperature rhombohedral ferroelectric phase region of Pb(Zr0.95Ti0.05)O3

Xu, Z., Dai, Xunhu, Li, Jie-Fang, Viehland, Dwight

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 703 KB

english, 1995

22

Room-temperature photoluminescence of GemSinGem structures

Gail, M., Abstreiter, G., Olajos, J., Engvall, J., Grimmeiss, H., Kibbel, H., Presting, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 328 KB

english, 1995

23

Passive Q switching of the Er3+:Y3Al5O12 laser at 1.64 μm

Camargo, Marly B., Stultz, Robert D., Birnbaum, Milton

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 326 KB

english, 1995

24

1 Gb/s Si high quantum efficiency monolithically integrable λ=0.88 μm detector

Levine, B. F., Wynn, J. D., Klemens, F. P., Sarusi, G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 491 KB

english, 1995

25

Inverse staggered polycrystalline and amorphous silicon double structure thin film transistors

Aoyama, Takashi, Ogawa, Kazuhiro, Mochizuki, Yasuhiro, Konishi, Nobutake

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 323 KB

english, 1995

26

Key elements for a sensitive 77 K direct current superconducting quantum interference device magnetometer

Lee, L. P., Teepe, M., Vinetskiy, V., Cantor, R., Colclough, M. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 584 KB

english, 1995

27

Comment on: ‘‘Modified KTiOPO4 crystals for noncritical phase matching applications’’ [Appl. Phys. Lett. 64, 16 (1994)]

Phillips, Mark L. F., Harrison, William T. A., Stucky, Galen D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 302 KB

english, 1995

28

Light amplification device using organic electroluminescent diode coupled with photoresponsive organic pigment film

Katsume, Tadashi, Hiramoto, Masahiro, Yokoyama, Masaaki

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 391 KB

english, 1995

29

Photoinduced intersubband transition in undoped HgCdTe multiple quantum wells

de Oliveira, C. R. M., de Paula, A. M., Cesar, C. L., West, L. C., Roberts, C., Feldman, R. D., Austin, R. F., Islam, M. N., Marques, G. E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 276 KB

english, 1995

30

Harmonic blue light generation in bulk periodically poled LiTaO3

Mizuuchi, Kiminori, Yamamoto, Kazuhisa

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 1.23 MB

english, 1995

31

Response to ‘‘Comment on ‘Influence of barrier height distribution on the parameters of Schottky diodes’ ’’ [Appl. Phys. Lett. 66, 3067 (1995)]

Dobročka, E., Osvald, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 227 KB

english, 1995

32

Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface

Glembocki, O. J., Tuchman, J. A., Ko, K. K., Pang, S. W., Giordana, A., Kaplan, R., Stutz, C. E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 267 KB

english, 1995

33

Kramers–Kronig relations in nonlinear optics

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 256 KB

english, 1995

34

Thickness effect on hydrogen plasma treatment on polycrystalline silicon thin films

Liou, Bor Wen, Wu, Yi Huang, Lee, Chung Len, Lei, Tan Fu

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 235 KB

english, 1995

35

Thermal-wave imaging of hydrogen in metals and alloys

Mussati, G., Sala, E., Maffi, S., Razzini, G., Peraldo Bicelli, L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 500 KB

english, 1995

36

Comment on ‘‘Influence of barrier height distribution on the parameters of Schottky diodes’’ [Appl. Phys. Lett. 65, 575 (1994)]

Horváth, Zs. J., Van Tuyen, Vo

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 223 KB

english, 1995

37

Phosphorus doping of silicon by proton induced nuclear reactions

Abril, Isabel, Garcia-Molina, Rafael, Erokhin, Konstantin M., Kalashnikov, Nicolay P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 268 KB

english, 1995

38

Local lattice distortion relating to phosphorus antisite defect in phosphorus-ion-implanted GaP layer

Kuriyama, K., Kato, Takashi, Tajima, Satoru, Kato, Tomoharu, Takeda, Sin-ichi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 267 KB

english, 1995

39

Sub-10 nm lithography and development properties of inorganic resist by scanning electron beam

Fujita, J., Watanabe, H., Ochiai, Y., Manako, S., Tsai, J. S., Matsui, S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 386 KB

english, 1995

40

Determination of oxide fixed charge at the top and bottom Si/SiO2 interfaces of silicon-on-insulator devices

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 262 KB

english, 1995

41

Effect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset

Wang, M. W., Collins, D. A., McGill, T. C., Grant, R. W., Feenstra, R. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 264 KB

english, 1995

42

Nanometer-scale recording on chalcogenide films with an atomic force microscope

Kado, H., Tohda, T.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 384 KB

english, 1995

43

Saturation behavior of the defect density in hydrogenated amorphous silicon by continuous and pulsed light illumination

Yoon, Jong-Hwan, Kim, H. L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 298 KB

english, 1995

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