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A Vertical Power MOSFET With an Interdigitated Drift Region Using High- $k$ Insulator
Chen, Xingbi, Huang, MingminVolume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2204890
Date:
September, 2012
File:
PDF, 710 KB
english, 2012