Semibulk InGaN: A novel approach for thick, single phase,...

Journal of Crystal Growth 2013 / 5 Vol. 370

Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.
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Volume:
370
Language:
english
Pages:
6
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2012.08.041
Date:
May, 2013
File:
PDF, 917 KB
english, 2013
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