Volume 370

Journal of Crystal Growth

Volume 370

1

High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure

Lazarev, S., Bauer, S., Forghani, K., Barchuk, M., Scholz, F., Baumbach, T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 911 KB

english, 2013

2

InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions

Mawst, L.J., Kirch, J.D., Chang, C.-C., Kim, T., Garrod, T., Botez, D., Ruder, S., Kuech, T.F., Earles, T., Tatavarti, R., Pan, N., Wibowo, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 962 KB

english, 2013

3

Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region

Rossow, U., Kruse, A., Jönen, H., Hoffmann, L., Ketzer, F., Langer, T., Buss, R., Bremers, H., Hangleiter, A., Mehrtens, T., Schowalter, M., Rosenauer, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 932 KB

english, 2013

4

HCl-assisted growth of GaN and AlN

Fahle, D., Brien, D., Dauelsberg, M., Strauch, G., Kalisch, H., Heuken, M., Vescan, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 774 KB

english, 2013

5

Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 917 KB

english, 2013

6

Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE

Anazawa, Kazehiko, Hassanet, Sodabanlu, Fujii, Katsushi, Nakano, Yoshiaki, Sugiyama, Masakazu

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.20 MB

english, 2013

7

Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer

Hwang, Jeongwoo, Lee, Kwanjae, Kim, Jin Soo, Lee, Cheul-Ro, Lee, In-Hwan, Lee, Kwangjae, Lee, Jin Hong, Leem, Jae-Young, Kim, Jong Su, Ryou, Jae-Hyun, Dupuis, Russell D.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 798 KB

english, 2013

8

Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

Ma, Jun, Zhu, Xueliang, Wong, Ka Ming, Zou, Xinbo, Lau, Kei May

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 615 KB

english, 2013

9

Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

Moudakir, T., Gautier, S., Suresh, S., Abid, M., El Gmili, Y., Patriarche, G., Pantzas, K., Troadec, D., Jacquet, J., Genty, F., Voss, P., Ougazzaden, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 985 KB

english, 2013

10

GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures

Leute, R.A.R., Heinz, D., Wang, J., Lipski, F., Meisch, T., Thonke, K., Thalmair, J., Zweck, J., Scholz, F.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 759 KB

english, 2013

11

Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits

Guillamet, R., Lagay, N., Mocuta, C., Lagrée, P.–Y., Carbone, G., Décobert, J.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 476 KB

english, 2013

12

MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers

Tuna, Ö., Hahn, H., Kalisch, H., Giesen, C., Vescan, A., Rzheutski, M.V., Pavlovskii, V.N., Lutsenko, E.V., Yablonskii, G.P., Heuken, M.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 814 KB

english, 2013

13

High power (>5W) λ∼9.6μm tapered quantum cascade lasers grown by OMVPE

Wang, C.A., Goyal, A.K., Menzel, S., Calawa, D.R., Spencer, M., Connors, M.K., McNulty, D., Sanchez, A., Turner, G.W., Capasso, F.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 822 KB

english, 2013

14

GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm light emission grown on InP substrate

Grasse, Christian, Gruendl, Tobias, Sprengel, Stephan, Wiecha, Peter, Vizbaras, Kristijonas, Meyer, Ralf, Amann, Markus-Christian

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 919 KB

english, 2013

15

Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs

Schwarzbäck, Thomas, Kahle, Hermann, Jetter, Michael, Michler, Peter

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 517 KB

english, 2013

16

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Gautier, S., Moudakir, T., Patriarche, G., Rogers, D.J., Sandana, V.E., Hosseini Téherani, F., Bove, P., El Gmili, Y., Pantzas, K., Sundaram, Suresh, Troadec, D., Voss, P.L., Razeghi, M., Ougazzaden,

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 586 KB

english, 2013

17

Fast AlGaN growth in a whole composition range in planetary reactor

Lundin, W.V., Nikolaev, A.E., Rozhavskaya, M.M., Zavarin, E.E., Sakharov, A.V., Troshkov, S.I., Yagovkina, M.A., Tsatsulnikov, A.F.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 688 KB

english, 2013

18

Anisotropic bow and plastic deformation of GaN on silicon

Dadgar, A., Fritze, S., Schulz, O., Hennig, J., Bläsing, J., Witte, H., Diez, A., Heinle, U., Kunze, M., Daumiller, I., Haberland, K., Krost, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 967 KB

english, 2013

19

Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates

Fang, Hao, Takaya, Yoshifumi, Miyake, Hideto, Hiramatsu, Kazumasa, Asamura, Hidetoshi, Kawamura, Keisuke, Oku, Hidehiko

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.15 MB

english, 2013

20

The effect of a temperature-varying sandwich buffer layer structure on GaN epitaxial layer grown on Si substrate

Lin, Jyun-Hao, Huang, Shyh-Jer, Su, Yan-Kuin, Hsu, Chao-Wei

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 797 KB

english, 2013

21

High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system

Ubukata, Akinori, Yano, Yoshiki, Shimamura, Hayato, Yamaguchi, Akira, Tabuchi, Toshiya, Matsumoto, Koh

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 565 KB

english, 2013

22

Site-controlled growth of single GaN quantum dots in nanowires by MOCVD

Choi, Kihyun, Arita, Munetaka, Kako, Satoshi, Arakawa, Yasuhiko

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 513 KB

english, 2013

23

Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method

Wang, Juan, Ryu, Heui-Bum, Park, Mi-Seon, Lee, Won-Jae, Choi, Young-Jun, Lee, Hae-Yong

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 927 KB

english, 2013

24

Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction

Jung, Byung Oh, Kwon, Yong Hun, Seo, Dong Ju, Lee, Dong Seon, Cho, Hyung Koun

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 645 KB

english, 2013

25

Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC

Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M.-A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 974 KB

english, 2013

26

Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Hospodková, A., Zíková, M., Pangrác, J., Oswald, J., Kuldová, K., Vyskočil, J., Hulicius, E.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 505 KB

english, 2013

27

Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb–Te nanowires by MOCVD

Longo, M., Stoycheva, T., Fallica, R., Wiemer, C., Lazzarini, L., Rotunno, E.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 950 KB

english, 2013

28

Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect

Uchida, Kazuo, Satoh, Kiwamu, Asano, Keita, Koizumi, Atsushi, Nozaki, Shinji

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 975 KB

english, 2013

29

Editorial Board

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 29 KB

english, 2013

30

Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates

Uesugi, K., Kuboya, S., Sanorpim, S., Onabe, K.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 847 KB

english, 2013

31

Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure

Ma, ShaoJun, Wang, Yunpeng, Sodabanlu, Hassanet, Watanabe, Kentaroh, Sugiyama, Masakazu, Nakano, Yoshiaki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 623 KB

english, 2013

32

Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy

Nishio, Mitsuhiro, Hayashida, Yuji, Saito, Katsuhiko, Tanaka, Tooru, Guo, Qixin

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 592 KB

english, 2013

33

Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence

Yang, Changjae, Lee, Sangsoo, Shin, Keun-Wook, Oh, Sewoung, Moon, Daeyoung, Kim, Sung-Dae, Kim, Young-Woon, Kim, Chang-Zoo, Park, Won-kyu, Choi, Won Jun, Park, Jinsub, Yoon, Euijoon

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

34

Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

Svensk, O., Ali, M., Riuttanen, L., Törmä, P.T., Sintonen, S., Suihkonen, S., Sopanen, M., Lipsanen, H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 617 KB

english, 2013

35

In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975nm DFB-BA diode lasers

Maaßdorf, A., Schultz, C.M., Brox, O., Wenzel, H., Crump, P., Bugge, F., Mogilatenko, A., Erbert, G., Weyers, M., Tränkle, G.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 524 KB

english, 2013

36

Contents

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 46 KB

english, 2013

37

Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer

Décobert, J., Guillamet, R., Mocuta, C., Carbone, G., Guerault, H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 674 KB

english, 2013

38

Fabrication and characterization of high efficiency green nanopillar LED

Ju, Jin-Woo, Hyeob Baek, Jong, Lee, Seung-Jae, Jeon, Dae-Woo, Park, Jae-Woo, Choi, Jung-Hun, Jang, Lee-Woon, Lee, In-Hwan

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 789 KB

english, 2013

39

Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels

Man Song, Keun, Min Kim, Jong, Soo Shin, Chan, Gi Ko, Chul, Koun Cho, Hyung, Ho Yoon, Dae, Min Hwang, Sung, Kim, Hogyoung

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 701 KB

english, 2013

40

16th International Conference on Metalorganic Vapor Phase Epitaxy

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 63 KB

english, 2013

41

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Barrigón, Enrique, Brückner, Sebastian, Supplie, Oliver, Döscher, Henning, Rey-Stolle, Ignacio, Hannappel, Thomas

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 437 KB

english, 2013

42

Optical study of GaAsN/GaAs and InGaAsN/GaAs T-shaped quantum wires grown by MOVPE

Klangtakai, Pawinee, Sanorpim, Sakuntam, Onabe, Kentaro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 649 KB

english, 2013

43

Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy

Huang, C.T., Wu, J.D., Liu, C.F., Huang, Y.S., Wan, C.T., Su, Y.K., Tiong, K.K.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 452 KB

english, 2013

44

Carrier dynamics and activation energy of CdTe/ZnTe nanostructures with different CdTe thicknesses

Han, Won Il, Lee, Ju Hyung, Choi, Jin Chul, Lee, Hong Seok

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 704 KB

english, 2013

45

Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy

Winden, Andreas, Mikulics, Martin, Stoica, Toma, von der Ahe, Martina, Mussler, Gregor, Haab, Anna, Grützmacher, Detlev, Hardtdegen, Hilde

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.34 MB

english, 2013

46

Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy

Nishio, Mitsuhiro, Kai, Keita, Fujiki, Ryota, Saito, Katsuhiko, Tanaka, Tooru, Guo, Qixin

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 626 KB

english, 2013

47

Defect states of a-plane GaN grown on r-plane sapphire by controlled integration of silica nano-spheres

Pak, Sang Woo, Lee, Dong Uk, Kim, Eun Kyu, Park, Sung Hyun, Joo, Kisu, Yoon, Euijoon

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 573 KB

english, 2013

48

MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808nm

Bugge, Frank, Netzel, Carsten, Weyers, Markus

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 944 KB

english, 2013

49

Growth of thick GaN layer on ZnAl2O4 spinel layer by HVPE

Yoo, Jinyeop, Choi, Sungkuk, Jung, Soohoon, Cho, Youngji, Lee, Jeungwoo, Lee, Sangtae, Lee, Wonjae, Lee, Hyunjae, Kim, Siyoung, Chang, Jiho

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.30 MB

english, 2013

50

Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs

Fikry, M., Ren, Z., Madel, M., Tischer, I., Thonke, K., Scholz, F.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 765 KB

english, 2013

51

GaN growth on Si pillar arrays by metalorganic chemical vapor deposition

Won, Dongjin, Weng, Xiaojun, Yuwen, Yu A., Ke, Yue, Kendrick, Chito, Shen, Haoting, Mayer, Theresa S., Redwing, Joan M.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.15 MB

english, 2013

52

From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE

Sladek, Kamil, Haas, Fabian, Heidelmann, Markus, Park, Daesung, Barthel, Juri, Dorn, Falk, Weirich, Thomas E., Grützmacher, Detlev, Hardtdegen, Hilde

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

53

In situ X-ray measurements of MOVPE growth of InxGa1−xN single quantum wells

Ju, Guangxu, Fuchi, Shingo, Tabuchi, Masao, Takeda, Yoshikazu

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

54

Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate

Jin, Xiuguang, Fuchi, Shingo, Takeda, Yoshikazu

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.16 MB

english, 2013

55

InGaN-based solar cells with a tapered GaN structure

Lin, Chia-Feng, Chen, Kuei-Ting, Chen, Sih-Han, Yang, Chung-Chieh, Huang, Wan-Chun, Hsieh, Tsung-Han

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 677 KB

english, 2013

56

Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer

Jeong, Joocheol, Jang, Jongjin, Hwang, Jungwhan, Jung, Chilsung, Kim, Jinwan, Lee, Kyungjae, Lim, Hyoungjin, Nam, Okhyun

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.22 MB

english, 2013

57

Defect reduction in (11–22) semipolar GaN with embedded InN islands on m-plane sapphire

Jung, Chilsung, Jang, Jongjin, Hwang, Junghwan, Jeong, Joocheol, Kim, Jinwan, Lee, kyungjae, Nam, Okhyun

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 726 KB

english, 2013

58

MOCVD growth of vertically aligned InGaN nanowires

Kuo, H.C., Su Oh, Tae, Ku, P.-C.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 639 KB

english, 2013

59

Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

Schulte, Kevin L., Garrod, Toby J., Wan Kim, Tae, Kirch, Jeremy, Ruder, Steven, Mawst, Luke J., Kuech, T.F.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.66 MB

english, 2013

60

Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE

Sommer, N., Buss, R., Ohlmann, J., Wegele, T., Jurecka, C., Liebich, S., Kunert, B., Stolz, W., Volz, K.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 932 KB

english, 2013

61

Enhanced emission efficiency of green InGaN/GaN multiple quantum wells by surface plasmon of Au nanoparticles

Kwon, Min-Ki, Kim, Ja-Yeon, Park, Seong-Ju

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 566 KB

english, 2013

62

Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate

Matsumoto, K., Makino, T., Kimura, K., Shimomura, K.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 674 KB

english, 2013

63

AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3μm grown by MOVPE on InP substrate

Grasse, Christian, Mueller, Michael, Gruendl, Tobias, Boehm, Gerhard, Roenneberg, Enno, Wiecha, Peter, Rosskopf, Juergen, Ortsiefer, Markus, Meyer, Ralf, Amann, Markus-Christian

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 842 KB

english, 2013

64

Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition

Tatebayashi, J., Ota, Y., Ishida, S., Nishioka, M., Iwamoto, S., Arakawa, Y.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 545 KB

english, 2013

65

MOVPE-grown AlxGa1−xAsyP1−y strain compensating layers on GaAs

Maassdorf, A., Zeimer, U., Weyers, M.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 634 KB

english, 2013

66

MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures

Ludewig, P., Knaub, N., Stolz, W., Volz, K.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 865 KB

english, 2013

67

AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation

Miya, S.S., Wagener, V., Botha, J.R.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 731 KB

english, 2013

68

Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers

Uchida, Kazuo, Kanaya, Heisuke, Imanishi, Hiroshi, Koizumi, Atushi, Nozaki, Shinji

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 373 KB

english, 2013

69

In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range

Berger, Christoph, Dadgar, Armin, Bläsing, Jürgen, Krost, Alois

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.36 MB

english, 2013

70

Nitride based heterostructures with Ga- and N-polarity for sensing applications

Fandrich, Malte, Mehrtens, Thorsten, Aschenbrenner, Timo, Klein, Thorsten, Gebbe, Martina, Figge, Stephan, Kruse, Carsten, Rosenauer, Andreas, Hommel, Detlef

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

71

Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

Kim, T.W., Garrod, T.J., Mawst, L.J., Kuech, T.F., LaLumondiere, S.D., Sin, Y., Lotshaw, W.T., Moss, S.C.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 472 KB

english, 2013

72

INGAN/GAN based semipolar green converters

Wang, J., Zhang, D., Leute, R.A.R., Meisch, T., Heinz, D., Tischer, I., Hocker, M., Thonke, K., Scholz, F.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 592 KB

english, 2013

73

MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates

Ravash, Roghaiyeh, Dadgar, Armin, Bertram, Frank, Dempewolf, Anja, Metzner, Sebastian, Hempel, Thomas, Christen, Jürgen, Krost, Alois

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.40 MB

english, 2013

74

Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template

Nishio, Gou, Yang, Shibo, Miyake, Hideto, Hiramatsu, Kazumasa

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 737 KB

english, 2013

75

AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN

Mitsunari, T., Tanikawa, T., Honda, Y., Yamaguchi, M., Amano, H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.20 MB

english, 2013

76

Improved optical absorption and photocurrent of GaAs solar cells with hexagonal micro-hole array surface texturing

Lam, Nguyen Dinh, Kim, Youngjo, Kim, Kangho, Jung, Kyunghan, Kang, Ho Kwan, Lee, Jaejin

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 518 KB

english, 2013

77

1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE

Wu, T.H., Su, Y.K., Chuang, R.W., Huang, C.Y., Wu, H.J., Lin, Y.C.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 693 KB

english, 2013

78

Site-controlled growth of InP/GaInP islands on periodic hole patterns in GaAs substrates produced by microsphere photolithography

Koroknay, E., Rengstl, U., Bommer, M., Jetter, M., Michler, P.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 621 KB

english, 2013

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