Modeling the Impact of the Trench Depth on the Gate–Drain...

IEEE Electron Device Letters 2011 / 09 Vol. 32; Iss. 9

Modeling the Impact of the Trench Depth on the Gate–Drain Capacitance in Power MOSFETs

Alatise, Olayiwola, Parker-Allotey, Nii-Adotei, Jennings, Michael, Mawby, Phil, Kennedy, Ian, Petkos, George
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2159476
Date:
September, 2011
File:
PDF, 530 KB
english, 2011
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