Benchmarking of Thermal Boundary Resistance in AlGaN/GaN...

IEEE Electron Device Letters 2010 / 12 Vol. 31; Iss. 12

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

Manoi, Athikom, Pomeroy, James W., Killat, Nicole, Kuball, Martin
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2077730
Date:
December, 2010
File:
PDF, 247 KB
english, 2010
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