Effect of the surface and barrier defects on the AlGaN/GaN...

IEEE Electron Device Letters 2003 / 09 Vol. 24; Iss. 9

Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance

Vertiatchikh, A.V., Eastman, L.F.
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2003.816588
Date:
September, 2003
File:
PDF, 250 KB
english, 2003
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