Over 550 V breakdown voltage of InAlN/GaN HEMT on Si

physica status solidi (c) 2013 / 05 Vol. 10; Iss. 5

Over 550 V breakdown voltage of InAlN/GaN HEMT on Si

Saito, Hisashi, Takada, Yoshiharu, Kuraguchi, Masahiko, Yumoto, Miki, Tsuda, Kunio
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Volume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201200608
Date:
May, 2013
File:
PDF, 1.03 MB
english, 2013
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