Volume 10; Issue 5

Main
physica status solidi (c)
Volume 10; Issue 5

physica status solidi (c)

Volume 10; Issue 5

1

Photovoltaic operation of quantum dot quantum cascade detector with low photoconductive gain for midwave infrared photodetection

Barve, Ajit V., Krishna, Sanjay

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 257 KB

english, 2013

2

Over 550 V breakdown voltage of InAlN/GaN HEMT on Si

Saito, Hisashi, Takada, Yoshiharu, Kuraguchi, Masahiko, Yumoto, Miki, Tsuda, Kunio

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 1.03 MB

english, 2013

3

High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE

Ye, Hong, Sadeghi, Mahdad, Song, Yuxin, Lai, Zonghe, Gu, Yi, Wang, Shumin

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 1.14 MB

english, 2013

4

High voltage GaN-on-silicon HEMT

Boles, T., Varmazis, C., Carlson, D., Palacios, T., Turner, G. W., Molnar, R. J.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 548 KB

english, 2013

5

317 GHz InAlGaN/GaN HEMTs with extremely low on-resistance

Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael, Saunier, Paul, Kopp, David, Fay, Patrick, Palacios, Tomás

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 286 KB

english, 2013

6

High transconductance ion-implanted GaN MISFETs using atomic layer deposited high-k dielectrics

Gu, S., Katayose, H., Nomoto, K., Nakamura, T., Ohoka, A., Lee, K., Lu, W., Asbeck, P. M.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 390 KB

english, 2013

7

AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks

Kobayashi, K., Kano, M., Yoshida, T., Katayama, R., Matsuoka, T., Otsuji, T., Suemitsu, T.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 1.88 MB

english, 2013

8

Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors

Mukherjee, Shubhajit, Puzyrev, Yevgeny, Hinckley, John, Schrimpf, Ronald D., Fleetwood, Daniel M., Singh, Jasprit, Pantelides, Sokrates T.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 427 KB

english, 2013

9

Insulating behavior of interfaces in regrown Al 0.23 Ga 0.77 N/GaN double heterostructures on Al 0.07 Ga 0.93 N back-barrier templates

Reuters, B., Hahn, H., Behmenburg, H., Heuken, M., Kalisch, H., Vescan, A.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 389 KB

english, 2013

10

Tensile strain-induced formation of micro-cracks for AlGaN/GaN heterostructures

Kotani, Junji, Tomabechi, Shuichi, Miyajima, Toyoo, Nakamura, Norikazu, Kikkawa, Toshihide, Watanabe, Keiji, Imanishi, Kenji

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 531 KB

english, 2013

11

GaN-based high voltage transistors for efficient power switching

Waltereit, Patrick, Reiner, Richard, Czap, Heiko, Peschel, Detlef, Müller, Stefan, Quay, Rüdiger, Mikulla, Michael, Ambacher, Oliver

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 522 KB

english, 2013

12

>1200 V GaN-on-silicon Schottky diode

Boles, T., Varmazis, C., Carlson, D., Palacios, T., Turner, G. W., Molnar, R. J.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 797 KB

english, 2013

13

Enhancement mode InAlGaN/GaN MISHFETs with plasma-oxidised AlO x /TiO x as gate insulator

Hahn, Herwig, Behmenburg, Hannes, Ketteniss, Nico, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 310 KB

english, 2013

14

InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds

Yoshida, Tomohiro, Kobayashi, Kengo, Otsuji, Taiichi, Suemitsu, Tetsuya

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 559 KB

english, 2013

15

Carrier lifetimes in green emitting InGaN/GaN disks-in-nanowire and characteristics of green light emitting diodes

Jahangir, Shafat, Banerjee, Animesh, Bhattacharya, Pallab

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 608 KB

english, 2013

16

Room temperature operation of ITO nano-crystal gas sensor

Koo, Jieun, Park, Seunghwan, Lee, Woong, Cho, Youngji, Lee, Hyojong, Lee, Sangtae, Chang, Jiho

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 810 KB

english, 2013

17

(111) InAs/GaSb type-II strained layer superlattice material for high operating temperature detection

Plis, Elena, Klein, Brianna, Myers, Stephen, Gautam, Nutan, Krishna, Sanjay

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 301 KB

english, 2013

18

Synthesis of AlON materials for UV emitting devices

Cho, Yujin, Koo, Jieun, Cho, Youngji, Lee, Woong, Lee, Jeungwoo, Lee, Byeongwoo, Lee, Sangtae, Chang, Jiho

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 856 KB

english, 2013

19

Estimation of effective mass and subbands in multi-quantum wells using polarized light irradiation

Tanaka, K., Happo, N., Fujiwara, M., Kotera, N.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 247 KB

english, 2013

20

MOVPE growth for photodiodes in 2.5 µm region with InGaAs/GaAsSb type-II quantum wells

Fujii, Kei, Ishizuka, Takashi, Nagai, Youichi, Iguchi, Yasuhiro, Akita, Katsushi

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 366 KB

english, 2013

21

Au-assisted growth of InAs nanowires on GaAs(111)B, GaAs(100), InP(111)B, InP(100) by MOVPE

Murakami, S., Funayama, H., Shimomura, K., Waho, T.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 253 KB

english, 2013

22

Growth process and morphology of three-dimensional GaSb islands on Ga/Si(111)

Hara, Shinsuke, Machida, Ryuto, Yoshiki, Keisuke, Irokawa, Katsumi, Miki, Hirofumi, Kawazu, Akira, Fujishiro, Hiroki I.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 634 KB

english, 2013

23

Electron-beam incident-angle- resolved cathodoluminescence studies on bulk ZnO crystals

Onuma, Takeyoshi, Yamaguchi, Tomohiro, Honda, Tohru

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 426 KB

english, 2013

24

AlGaAs anode heterojunction PIN diodes

Boles, T., Brogle, J., Hoag, D., Carlson, D.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 1.61 MB

english, 2013

25

Modeling of Sb-heterostructure backward diode for millimeter- and submillimeter-wave detection

Aghdam, Parisa Yadranjee, Zhao, Huan

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 475 KB

english, 2013

26

Ridge waveguide InGaN/GaN quantum dot edge emitting visible lasers

Banerjee, Animesh, Frost, Thomas, Jahangir, Shafat, Stark, Ethan, Bhattacharya, Pallab

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 530 KB

english, 2013

27

Extremely improved InP template and GaInAsP system growth on directly-bonded InP/SiO 2 -Si and InP/glass substrate

Matsumoto, Keiichi, Makino, Tatsunori, Kimura, Katsuya, Shimomura, Kazuhiko

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 540 KB

english, 2013

28

Polarization dependent photocurrent spectroscopy for identification of quantum confined interband transitions in type-II InAs/GaSb superlattices

Gautam, Nutan, Barve, Ajit Vijay, Krishna, Sanjay

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 367 KB

english, 2013

29

Noise characteristics of InAs/GaSb superlattice infrared photodiodes

Wörl, Andreas, Kleinow, Philipp, Rehm, Robert, Schmitz, Johannes, Walther, Martin

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 266 KB

english, 2013

30

Fast GaN based Schottky diodes on Si(111) substrate with low onset voltage and strong reverse blocking

Treidel, Eldad Bahat, Hilt, Oliver, Wentzel, Andreas, Würfl, Joachim, Tränkle, Günther

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 364 KB

english, 2013

31

Systematic theoretical investigations for the polytypism in SiC

Ito, Tomonori, Akiyama, Toru, Nakamura, Kohji

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 345 KB

english, 2013

32

Carrier dynamics and localization in AlInN/GaN heterostructures

Marcinkevičius, Saulius, Liuolia, Vytautas, Billingsley, Daniel, Shatalov, Maxim, Yang, Jinwei, Gaska, Remis, Shur, Michael S.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 411 KB

english, 2013

33

Improvement of the electrical properties of Al 2 O 3 /AlGaN/GaN MOSHFETs by gate-first process

Miyazaki, Eiji, Kishimoto, Shigeru, Mizutani, Takashi

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 420 KB

english, 2013

34

Coherent manipulation of three-spin states in a GaAs/AlGaAs triple dot device

Studenikin, S., Aers, G., Granger, G., Gaudreau, L., Kam, A., Zawadzki, P., Wasilewski, Z. R., Sachrajda, A.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 425 KB

english, 2013

35

Spiking rate of myenteric neurons recorded from multi-electrode arrays depending on local microenvironment

Medert, Rebekka, Schuster, Anne, Schwarz, Lukas Kristoffer, Schwab, Tanja, Schaefer, Karl-Herbert

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

36

InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced C cb and increased RF cut-off frequency

Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 458 KB

english, 2013

37

Cell proliferation monitoring by multiplexed electrochemical impedance spectroscopy on microwell assays

Duchateau, Stijn, Broeders, Jeroen, Croux, Dieter, Janssen, Daniel, Rigo, Jean-Michel, Wagner, Patrick, Thoelen, Ronald, De Ceuninck, Ward

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 383 KB

english, 2013

38

An accurate interband tunneling model for InAs/GaSb heterostructure devices

Shams, Md. Itrat Bin, Xie, Yi, Lu, Yeqing, Fay, Patrick

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 585 KB

english, 2013

39

Contents: Phys. Status Solidi C 5/2013

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 155 KB

english, 2013

40

Compound Semiconductors

Krishna, Sanjay, Plis, Elena, Bhattacharya, Pallab, Huffaker, Diana

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 280 KB

english, 2013

41

Cover Picture: Phys. Status Solidi C 5/2013

Journal:

physica status solidi (c)

Year:

2013

File:

PDF, 200 KB

2013

42

Issue Information: Phys. Status Solidi C 5/2013

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 685 KB

english, 2013

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски