Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on...

IEEE Electron Device Letters 2011 / 09 Vol. 32; Iss. 9

Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate

Medjdoub, Farid, Waldhoff, N., Zegaoui, M., Grimbert, B., Rolland, N., Rolland, P. A.
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2161261
Date:
September, 2011
File:
PDF, 340 KB
english, 2011
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