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Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy
Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P.Volume:
46
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782612110024
Date:
November, 2012
File:
PDF, 262 KB
english, 2012