Quantum modelling of I –...

Semiconductor Science and Technology 2005 / 01 Vol. 20; Iss. 1

Quantum modelling of I – V characteristics for 4H–SiC Schottky barrier diodes

Blasciuc-Dimitriu, C, Horsfall, A B, Wright, N G, Johnson, C M, Vassilevski, K V, O'Neill, A G
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Volume:
20
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/20/1/002
Date:
January, 2005
File:
PDF, 807 KB
english, 2005
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