Volume 20; Issue 1

Semiconductor Science and Technology

Volume 20; Issue 1

1

Quantum modelling of I – V characteristics for 4H–SiC Schottky barrier diodes

Blasciuc-Dimitriu, C, Horsfall, A B, Wright, N G, Johnson, C M, Vassilevski, K V, O'Neill, A G

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 807 KB

english, 2005

2

Band gap shift, structural characterization and phase transformation of CdSe thin films from nanocrystalline cubic to nanorod hexagonal on air annealing

Kale, R B, Lokhande, C D

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 1.30 MB

english, 2005

3

Absorption and reflection analysis of transparent conductive Ga-doped ZnO films

Aghamalyan, N R, Kafadaryan, E A, Hovsepyan, R K, Petrosyan, S I

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 170 KB

english, 2005

4

Ultrahigh gain and non-radiative recombination channels in 1.5 µm range metamorphic InAs–InGaAs quantum dot lasers on GaAs substrates

Novikov, I I, Gordeev, N Yu, Maximov, M V, Shernyakov, Yu M, Zhukov, A E, Vasil'ev, A P, Semenova, E S, Ustinov, V M, Ledentsov, N N, Bimberg, D, Zakharov, N D, Werner, P

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 435 KB

english, 2005

5

Determination of defect level parameters in semi-insulating GaAs:Cr from transient photocurrent experiment

Belgacem, H, Merazga, A, Longeaud, C

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 226 KB

english, 2005

6

The structural and optical properties of Cu 2 O films electrodeposited on different substrates

Liu, Y L, Liu, Y C, Mu, R, Yang, H, Shao, C L, Zhang, J Y, Lu, Y M, Shen, D Z, Fan, X W

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 258 KB

english, 2005

7

Effect of In additive on the electrical properties of Se–Te alloy

Sharma, Vineet, Thakur, Anup, Goyal, N, Saini, G S S, Tripathi, S K

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 176 KB

english, 2005

8

Correlation between the low-temperature PL spectra and Cd 0.9 Zn 0.1 Te quality

Li, Guoqiang, Zhang, Xiaolu, Jie, Wanqi

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 290 KB

english, 2005

9

Electrical and materials characterization of GSMBE grown Si 1− x − y Ge x C y layers for heterojunction bipolar transistor applications

Mitrovic, I Z, Buiu, O, Hall, S, Zhang, J, Wang, Y, Hemment, P L F, Mubarek, H A W El, Ashburn, P

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 1.04 MB

english, 2005

10

Simple analytical valence band structure including warping and non-parabolicity to investigate hole transport in Si and Ge

Rodríguez-Bolívar, S, Gómez-Campos, F M, Carceller, J E

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 181 KB

english, 2005

11

Optimized dual temperature pulsed laser deposition of TiO 2 to realize MTOS (metal-TiO 2 –SiO 2 –Si) capacitors with ultrathin gate dielectric

Singh, Ravneet, Paily, Roy, DasGupta, Amitava, DasGupta, Nandita, Misra, Pankaj, Kukreja, Lalit M

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 208 KB

english, 2005

12

Lamp design for fast cooling of rapid thermal processes with a two-zone lamp using a step cooling process

Hung, S Y, Chao, C K, Hsu, C K

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 222 KB

english, 2005

13

DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications

Cojocari, O, Biber, S, Mottet, B, Rodriguez-Girones, M, Hartnagel, H L, Schmidt, L-P

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 798 KB

english, 2005

14

Reliability of HfSiON gate dielectrics

O'Connor, Robert, Hughes, Greg, Degraeve, Robin, Kaczer, Ben, Kauerauf, Thomas

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 147 KB

english, 2005

15

Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

Mnatsakanov, T T, Levinshtein, M E, Ivanov, P A, Palmour, J W, Das, M, Agarwal, A K

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 267 KB

english, 2005

16

Electron spin resonance and related phenomena of low-dimensional electronic systems in III–V compounds

Meisels, Ronald

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 452 KB

english, 2005

17

Charge carrier mobility in field effect transistors: analysis of capacitance–conductance measurements

Katz, O, Roichman, Y, Bahir, G, Tessler, N, Salzman, J

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 160 KB

english, 2005

18

Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures

Mynbaeva, M G, Mynbaev, K D, Sarua, A, Kuball, M

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 655 KB

english, 2005

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